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Researcher profile

Chuanbing Cai

Chuanbing Cai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.chem-phphysics.opticscond-mat.str-elcond-mat.supr-con

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Published work

5 published item(s)

preprint2025arXiv

Interfacial Strain Modulated Correlated Plasmons in La1.85Sr0.15CuO4 and Their Role in High-temperature Superconductivity

High-temperature superconductivity in cuprate materials remains a major challenge in physics due to the complexity of their strongly correlated electronic states. Interfacial strain is a powerful lever for tuning electronic correlations in complex oxides, offering new pathways to control emergent quantum phases. Here, we report the discovery of interfacial strain modulated correlated plasmons observed exclusively in superconducting La1.85Sr0.15CuO4 (LSCO) through spectroscopic ellipsometry. This form of plasmons is absent in the non-superconducting LSCO counterparts. Detailed analysis reveals that these correlated plasmons, arising from the collective excitations within Mott-correlated bands, are driven by long-range electronic correlations in the Cu-O planes. Furthermore, long-range electronic correlations, intricately modulated by interfacial strain, may play a crucial role in the emergence of superconductivity and in tuning the transition temperature. Dynamical cluster approximation (DCA) with quantum Monte Carlo (QMC) calculations of the extended Hubbard model suggest that long-range Coulomb interactions play an important role in LSCO, showing good agreement with our experimental findings. The collective evidence from both the experimental results and theoretical findings provides new insights into the nature of collective excitations and their pivotal role in the emergence of high-temperature superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The effects of electron correlation and spin-orbit coupling in the isovalent Pd-doped superconductor SrPt$_3$P

We present a systematical study on the roles of electron correlation and spin-orbit coupling in the isovalent Pd-doped superconductor SrPt$_3$P. By using solid state reaction method, we fabricated the strong spin-orbit coupling superconductors Sr(Pt$_{1-x}$Pd$_x$)$_3$P with strong electron correlated Pd dopant of the $4d$ orbital. As increasing the isovalent Pd concentrations without introducing any extra electron/hole carriers, the superconducting transition temperature $T_c$ decreases monotonously, which suggests the existence of competition between spin-orbit coupling and electron correlation in the superconducting state. In addition, the electronic band structure calculations demonstrate that the strength of electron susceptibility is suppressed gradually by the Pd dopant suggesting the incompatible relation between spin-orbit coupling and electron correlation, which is also consistent with experimental measurements. Our results provide significant insights in the natures of the interplay between the spin-orbit coupling and the electron correlation in superconductivity, and may pave a way for understanding the mechanism of superconductivity in this 5d-metal-based compound.

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preprint2012arXiv

Low-voltage Driving Phototransistor Based on Dye-sensitized Nanocrystalline Titanium Dioxide Thin Films

Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the voltage-current curve is achievable with a low driven bias for the present device. The response current exhibits a linear dependence on the intensity of gated light, and the measured maximum photosensitivity is approximately 0.1 A/W. The dynamic responses for various light frequencies and their dependences on the load resistances are investigated as well. The cut-off frequency of ~50 Hz is abstracted, indicating the potential application for economical and efficient light switch or optical communication unit. The dc photo-gated response is explained by the energy level diagram, and is numerically simulated by an equivalent circuit model, suggesting a clear correlation between photovoltaic and photoconductive behaviors as well as their optical responses.

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preprint2012arXiv

Resistance Switching Induced by Electric Field and Light Illumination in Device of FTO/CeO2/Electrolyte/FTO

A heterojunction-like device consisting of FTO/CeO2/electrolyte/FTO is established with distinct transport performance, where FTO denotes F-doped transparent conducting glass, and the electrolyte is LiI and I2 in acetonitrile. The resistive switching behavior is observed, being induced through applying sufficient negative pulse as well as light illumination. The endurance measurements confirm that the write/erase periodic operation is reproducible and stable in the present device. Furthermore, the retention measurements demonstrate that the information can be stored temporarily for about 100 seconds. A possible mechanism regarding the formation of diiodide radical is proposed to give a reasonable explanation for the observed switching behavior.

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preprint2012arXiv

Study of band bending effect in Dye Sensitized Solar Cell through Constant-Current-Discharging Voltage Decay

A measurement method of constant-current-discharging voltage decay is established to characterize the band bending effect in the heterojunction of conducting glass/TiO2 for typical dye-sensitized solar cells. Furthermore, a dark-state electron transport regarding the TiO2 conduction band bending is proposed based upon the viewpoints of thermionic emission mechanism, which suggests an origin of the band bending effect in a theoretical model. This model quantitatively agrees well with our experimental results and indicates that both the Fermi level decay in TiO2 and the potential difference across the heterojunction will lead to the TiO2 conduction band bending downwards.

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