Source author record

Christopher T. Phare

Christopher T. Phare appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

physics.optics cond-mat.mes-hall physics.app-ph

Catalog footprint

What is connected

4works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Broadband Ultrahigh-Resolution chip-scale Scanning Soliton Dual-Comb Spectroscopy

We present a chip-scale scanning dual-comb spectroscopy (SDCS) approach for broadband ultrahigh-resolution spectral acquisition. SDCS uses Si3N4 microring resonators that generate two single soliton micro-combs spanning 37 THz (300 nm) on the same chip from a single 1550-nm laser, forming a high-mutual-coherence dual-comb. We realize continuous tuning of the dual-comb system over the entire optical span of 37.5 THz with high precision using integrated microheater-based wavelength trackers. This continuous wavelength tuning is enabled by simultaneous tuning of the laser frequency and the two single soliton micro-combs over a full free spectral range of the microrings. We measure the SDCS resolution to be 319+-4.6 kHz. Using this SDCS system, we perform the molecular absorption spectroscopy of H13C14N over its 2.3 THz (18 nm)-wide overtone band, and show that the massively parallel heterodyning offered by the dual-comb expands the effective spectroscopic tuning speed of the laser by one order of magnitude. Our chip-scale SDCS opens the door to broadband spectrometry and massively parallel sensing with ultrahigh spectral resolution.

preprint2014arXiv

30 GHz Zeno-based Graphene Electro-optic Modulator

Graphene has generated exceptional interest as an optoelectronic material because its high carrier mobility and broadband absorption promise to make extremely fast and broadband electro-optic devices possible. Electro-optic graphene modulators reported to date, however, have been limited in bandwidth to a few GHz because of the large capacitance required to achieve reasonable voltage swings. Here we demonstrate a graphene electro-optic modulator based on the classical Zeno effect that shows drastically increased speed and efficiency. Our device operates with a 30 GHz bandwidth, over an order of magnitude faster than prior work, and a state-of-the-art modulation efficiency of 1.5 dB/V. We also show the first high-speed large-signal operation in a graphene modulator, paving the way for fast digital communications using this platform. The modulator uniquely uses silicon nitride waveguides, an otherwise completely passive material platform, with promising applications for ultra-low-loss broadband structures and nonlinear optics.

preprint2014arXiv

Silicon-Chip Mid-Infrared Frequency Comb Generation

Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR in several platforms, including fiber combs, mode-locked lasers, optical parametric oscillators, and quantum cascade lasers. However, these platforms are either relatively bulky or challenging to integrate on-chip. An alternative approach using parametric mixing in microresonators is highly promising since the platform is extremely compact and can operate with relatively low powers. However, material and dispersion engineering limitations have prevented the realization of a microresonator comb source past 2.55 um. Although silicon could in principle provide a CMOS compatible platform for on-chip comb generation deep into the mid-IR, to date, silicon's linear and nonlinear losses have prevented the realization of a microresonator-based comb source. Here we overcome these limitations and realize a broadband frequency comb spanning from 2.1 um to 3.5 um and demonstrate its viability as a spectroscopic sensing platform. Such a platform is compact and robust and offers the potential to be versatile and durable for use outside the laboratory environment for applications such as real-time monitoring of atmospheric gas conditions.

preprint2013arXiv

High Q SiC microresonators

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 um radius suspended microring resonator with Q of 18000 fabricated on commercially available SiC-on-silicon substrates.