Researcher profile

Christian Panse

Christian Panse contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

VM-MAD: a cloud/cluster software for service-oriented academic environments

The availability of powerful computing hardware in IaaS clouds makes cloud computing attractive also for computational workloads that were up to now almost exclusively run on HPC clusters. In this paper we present the VM-MAD Orchestrator software: an open source framework for cloudbursting Linux-based HPC clusters into IaaS clouds but also computational grids. The Orchestrator is completely modular, allowing flexible configurations of cloudbursting policies. It can be used with any batch system or cloud infrastructure, dynamically extending the cluster when needed. A distinctive feature of our framework is that the policies can be tested and tuned in a simulation mode based on historical or synthetic cluster accounting data. In the paper we also describe how the VM-MAD Orchestrator was used in a production environment at the FGCZ to speed up the analysis of mass spectrometry-based protein data by cloudbursting to the Amazon EC2. The advantages of this hybrid system are shown with a large evaluation run using about hundred large EC2 nodes.

preprint2012arXiv

Electronic bands of III-V semiconductor polytypes and their alignment

The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme, the LDA-1/2 method. The results are used to derive band offsets $ΔE_c$ and $ΔE_v$ for the conduction and valence bands between two polytypes. The alignment of the band structures is based on the branch-point energy $E_{\rm BP}$ for each polytype. The aligned electronic structures are used to explain properties of heterocrystalline but homomaterial junctions. The gaps and offsets allow to discuss spectroscopic results obtained recently for such junctions in III-V nanowires.