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Jürgen Furthmüller

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2019arXiv

Quantization of spin Hall conductivity in two-dimensional topological insulators versus symmetry and spin-orbit interaction

The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric systems independent of the gap size. 2D crystals with hexagonal and square Bravais lattice show similar effects, while true rectangular translational symmetry yields conductivity values much below the quantum $e^2/h$. Field-induced lifting the inversion symmetry does not influence the quantum spin Hall state up to band inversion but the conductivity quantization. Weak symmetry-conserving biaxial but also uniaxial strain has a minor influence as long as inverted gaps dictate the topological character. The results are discussed in terms of the atomic geometry and the Rashba contribution to the spin-orbit interaction (SOI). Translational and point-group symmetry as well as SOI rule the deviation from the quantization of the spin Hall conductance.

preprint2016arXiv

Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga$_2$O$_3$

We apply a generalized model for the determination and analysis of the dielectric function of optically anisotropic materials with colour dispersion to phonon modes and show that it can also be generalized to excitonic polarizabilities and electronic band-band transitions. We take into account that the tensor components of the dielectric function within the cartesian coordinate system are not independent from each other but are rather projections of the polarization of dipoles oscillating along directions defined by the, non-cartesian, crystal symmetry and polarizability. The dielectric function is then composed of a series of oscillators pointing in different directions. The application of this model is exemplarily demonstrated for monoclinic ($β$-phase) Ga$_2$O$_3$ bulk single crystals. Using this model, we are able to relate electronic transitions observed in the dielectric function to atomic bond directions and orbitals in the real space crystal structure. For thin films revealing rotational domains we show that the optical biaxiality is reduced to uniaxial optical response.

preprint2015arXiv

Dielectric tensor of monoclinic Ga$_2$O$_3$ single crystals in the spectral range $0.5 - 8.5\,$eV

The dielectric tensor of $β$-Ga$_2$O$_3$ was determined by generalized spectroscopic ellipsometry in a wide spectral range from $0.5\,\mathrm{eV}$ to $8.5\,\mathrm{eV}$ as well as by calculation including quasiparticle bands and excitonic effects. The dielectric tensors obtained by both methods are in excellent agreement with each other and the observed transitions in the dielectric function are assigned to the corresponding valence bands. It is shown that the off-diagonal element of the dielectric tensor reaches values up to $|\varepsilon_{xz} | \approx 0.30 $ and cannot be neglected. Even in the transparent spectral range where it is quite small ($|\varepsilon_{xz} | < 0.02 $) it causes a rotation of the dielectric axes around the symmetry axis of up to $20^\circ$.

preprint2013arXiv

Electronic and optical properties of Cadmium fluoride: the role of many-body effects

Electronic excitations and optical spectra of $CdF_{2}$ are calculated up to ultraviolet employing state-of-the-art techniques based on density functional theory and many-body perturbation theory. The GW scheme proposed by Hedin has been used for the electronic self-energy to calculate single-particle excitation properties as energy bands and densities of states. For optical properties many-body effects, treated within the Bethe-Salpeter equation framework, turn out to be crucial. A bound exciton located about 1 eV below the quasiparticle gap is predicted. Within the present scheme the optical absorption spectra and other optical functions show an excellent agreement with experimental data. Moreover, we tested different schemes to obtain the best agreement with experimental data. Among the several schemes, we suggest a self-consistent quasiparticle energy scheme.

preprint2012arXiv

Electronic bands of III-V semiconductor polytypes and their alignment

The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme, the LDA-1/2 method. The results are used to derive band offsets $ΔE_c$ and $ΔE_v$ for the conduction and valence bands between two polytypes. The alignment of the band structures is based on the branch-point energy $E_{\rm BP}$ for each polytype. The aligned electronic structures are used to explain properties of heterocrystalline but homomaterial junctions. The gaps and offsets allow to discuss spectroscopic results obtained recently for such junctions in III-V nanowires.