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Chris Bowen

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cond-mat.mes-hall cond-mat.other physics.app-ph Robotics

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preprint2020arXiv

Thermal energy harvesting using pyroelectric-electrochemical coupling in ferroelectric materials

Recently, the coupling of ferroelectrics with electrochemical reactions has attracted increasing interest for harvesting waste heat. The change of polarisation of a ferroelectric with temperature can be used to influence chemical reactions, especially when the material is cycled near its Curie temperature. In this perspective, we introduce the principle of pyroelectric controlled electrochemical processes by harvesting waste heat energy and explore their potential electrochemical applications, such as water treatment, air purificiation and hydrogen generation. As an emerging approach for driving electrochemical reactions, the presence of thermal fluctuations and/or transient waste heat in the environment has the potential to be the primary thermal input for driving the change in polarisation of a pyroelectric to release charge for such reactions. There are a number of avenues to explore and we summarize strategies for forming multi-functional or hybrid materials and future directions such as selecting pyroelectrics with low Curie temperature (< 100 °C), improved heat conductivity, enhanced surface area or porosity, tailored microstructures and systems capable of operating over a broader temperature range.

preprint2016arXiv

Interleaving Optimization with Sampling-Based Motion Planning (IOS-MP): Combining Local Optimization with Global Exploration

Computing globally optimal motion plans for a robot is challenging in part because it requires analyzing a robot's configuration space simultaneously from both a macroscopic viewpoint (i.e., considering paths in multiple homotopic classes) and a microscopic viewpoint (i.e., locally optimizing path quality). We introduce Interleaved Optimization with Sampling-based Motion Planning (IOS-MP), a new method that effectively combines global exploration and local optimization to quickly compute high quality motion plans. Our approach combines two paradigms: (1) asymptotically-optimal sampling-based motion planning, which is effective at global exploration but relatively slow at locally refining paths, and (2) optimization-based motion planning, which locally optimizes paths quickly but lacks a global view of the configuration space. IOS-MP iteratively alternates between global exploration and local optimization, sharing information between the two, to improve motion planning efficiency. We evaluate IOS-MP as it scales with respect to dimensionality and complexity, as well as demonstrate its effectiveness on a 7-DOF manipulator for tasks specified using goal configurations and workspace goal regions.

preprint2013arXiv

A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide and indium arsenide

We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gallium arsenide and indium arsenide with three crystal orientations, (100), (110) and (111), included for each material. We find that the D2 states in a silicon (100) quantum well have the smallest density near the surface of the slab. Inspection of the planar average of the carrier densities reveals a characteristic shape that depends on the material and orientation, which leads to a varying degree of suppression or enhancement of the density near the surface. The physics responsible for the suppression or enhancement of the density near the surface can be traced to a constraint imposed by the symmetry of quantum well wavefunction on the phases of the bulk Bloch states of the crystal from which it can be constructed.

preprint2012arXiv

Physical insight into reduced surface roughness scattering in strained silicon inversion layers

A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this discrepancy is due to a bulging effect in the electron Δ4 wavefunction at the silicon surface. This renders Δ4 electrons more susceptible to perturbations in surface structure thereby increasing surface roughness scattering for these states. Strain engineering utilized by the CMOS industry reduces the relative occupancy of the Δ4 states resulting in less overall surface roughness scattering in the channel. We show that the origin of this effect can be explained by moving beyond the effective mass approximation and contrasting the properties of the Δ2 and Δ4 wavefunctions in a representation that comprehends full crystal and Bloch state symmetry.