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Chiheb Ben Mahmoud

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Published work

2 published item(s)

preprint2025arXiv

Machine learning model for efficient nonthermal tuning of the charge density wave in monolayer NbSe$_2$

Understanding and controlling the charge density wave (CDW) phase diagram of transition metal dichalcogenides is a long-studied problem in condensed matter physics. However, due to complex involvement of electron and lattice degrees of freedom and pronounced anharmonicity, theoretical simulations of the CDW phase diagram at the density-functional-theory level are often numerically demanding. To reduce the computational cost of first principles modelling by orders of magnitude, we have developed an electronic free energy machine learning model for monolayer NbSe$_2$ that allows changing both electronic and ionic temperatures independently. Our approach relies on a machine learning model of the electronic density of states and zero-temperature interatomic potential. This allows us to explore the CDW phase diagram of monolayer NbSe$_2$ both under thermal and laser-induced nonthermal conditions. Our study provides an accurate estimate of the CDW transition temperature at low cost and can disentangle the role of hot electrons and phonons in nonthermal ultrafast melting process of the CDW phase in NbSe$_2$.

preprint2020arXiv

Learning the electronic density of states in condensed matter

The electronic density of states (DOS) quantifies the distribution of the energy levels that can be occupied by electrons in a quasiparticle picture, and is central to modern electronic structure theory. It also underpins the computation and interpretation of experimentally observable material properties such as optical absorption and electrical conductivity. We discuss the challenges inherent in the construction of a machine-learning (ML) framework aimed at predicting the DOS as a combination of local contributions that depend in turn on the geometric configuration of neighbours around each atom, using quasiparticle energy levels from density functional theory as training data. We present a challenging case study that includes configurations of silicon spanning a broad set of thermodynamic conditions, ranging from bulk structures to clusters, and from semiconducting to metallic behavior. We compare different approaches to represent the DOS, and the accuracy of predicting quantities such as the Fermi level, the DOS at the Fermi level, or the band energy, either directly or as a side-product of the evaluation of the DOS. The performance of the model depends crucially on the smoothening of the DOS, and there is a tradeoff to be made between the systematic error associated with the smoothening and the error in the ML model for a specific structure. We demonstrate the usefulness of this approach by computing the density of states of a large amorphous silicon sample, for which it would be prohibitively expensive to compute the DOS by direct electronic structure calculations, and show how the atom-centred decomposition of the DOS that is obtained through our model can be used to extract physical insights into the connections between structural and electronic features.