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Chih-Yuan Wu

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cond-mat.dis-nn cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2012arXiv

Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer $e$-$e$ scattering process was observed. Below about 1--2 K, the dephasing time $τ_φ$ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant $D$, i.e., $τ_φ(T \approx 0.3 \, {\rm K}) \propto 1/D$. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented.

preprint2011arXiv

Electrical conduction processes in ZnO in a wide temperature range 20--500 K

We have investigated the electrical conduction processes in as-grown and thermally cycled ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature range 20--500 K. In the case of ZnO single crystal between 110 and 500 K, two types of thermal activation conduction processes are observed. This is explained in terms of the existence of both shallow donors and intermediately deep donors which are consecutively excited to the conduction band as the temperature increases. By measuring the resistivity $ρ(T)$ of a given single crystal after repeated thermal cycling in vacuum, we demonstrate that oxygen vacancies play an important role in governing the shallow donor concentrations but leave the activation energy ($\simeq27\pm$2 meV) largely intact. In the case of polycrystalline films, two types of thermal activation conduction processes are also observed between $\sim$150 and 500 K. Below $\sim$150 K, we found an additional conduction process due to the nearest-neighbor-hopping conduction mechanism which takes place in the shallow impurity band. As the temperatures further decreases below $\sim$80 K, a crossover to the Mott variable-range-hopping conduction process is observed. Taken together with our previous measurements on $ρ(T)$ of ZnO polycrystalline films in the temperature range 2--100 K [Y. L. Huang {\it et al.}, J. Appl. Phys. \textbf{107}, 063715 (2010)], this work establishes a quite complete picture of the overall electrical conduction mechanisms in the ZnO material from liquid-helium temperatures up to 500 K.