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Chia-Seng Chang

Chia-Seng Chang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el cond-mat.supr-con physics.soc-ph q-fin.ST quant-ph

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preprint2020arXiv

Impact of Band Structure on Wave Function Dissipation in Field Emission Resonance

We demonstrated on Ag(111) and Ag(100) surfaces that the reciprocal of the field emission resonance (FER) linewidth, which is proportional to the mean lifetime of resonant electrons in FER, may vary with the electric field. The variation on Ag(111) was nearly smooth, whereas that on Ag(100) was sporadic and fluctuated remarkably. This drastic difference can be explained through their dissimilar projected bulk band structures and the ensemble interpretation of quantum mechanics, according to which all resonant electrons are governed by a single wave function. Ag(100) has an energy gap above its vacuum level, whereas Ag(111) does not. Consequently, the dissipation rate of the wave function, which is relevant to the FER linewidth, on Ag(111) was almost stable, whereas that on Ag(100) fluctuated. The fluctuation revealed that the quantum trapping effect and surface dipole layer on Ag(100) surface can be investigated through FER.

preprint2016arXiv

Superconducting Topological Surface States in Non-centrosymmetric Bulk Superconductor PbTaSe2

The search for topological superconductors (TSCs) is one of the most urgent contemporary problems in condensed matter systems. TSCs are characterized by a full superconducting gap in the bulk and topologically protected gapless surface (or edge) states. Within each vortex core of TSCs, there exist the zero energy Majorana bound states, which are predicted to exhibit non-Abelian statistics and to form the basis of the fault-tolerant quantum computation. So far, no stoichiometric bulk material exhibits the required topological surface states (TSSs) at Fermi level combined with fully gapped bulk superconductivity. Here, we report atomic scale visualization of the TSSs of the non-centrosymmetric fully-gapped superconductor, PbTaSe2. Using quasiparticle scattering interference (QPI) imaging, we find two TSSs with a Dirac point at E~1.0eV, of which the inner TSS and partial outer TSS cross Fermi level, on the Pb-terminated surface of this fully gapped superconductor. This discovery reveals PbTaSe2 as a promising candidate as a TSC.

preprint2014arXiv

An Empirical Method to Measure Stochasticity and Multifractality in Nonlinear Time Series

An empirical algorithm is used here to study the stochastic and multifractal nature of nonlinear time series. A parameter can be defined to quantitatively measure the deviation of the time series from a Wiener process so that the stochasticity of different time series can be compared. The local volatility of the time series under study can be constructed using this algorithm and the multifractal structure of the time series can be analyzed by using this local volatility. As an example, we employ this method to analyze financial time series from different stock markets. The result shows that while developed markets evolve very much like an Ito process, the emergent markets are far from efficient. Differences about the multifractal structures and leverage effects between developed and emergent markets are discussed. The algorithm used here can be applied in a similar fashion to study time series of other complex systems.

preprint2012arXiv

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.