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Chennupati Jagadish

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Published work

10 published item(s)

preprint2020arXiv

Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterisation of nanowire laser populations using automated optical microscopy, and a high accuracy transfer printing process with automatic device spatial registration and transfer. In this work a population of NW lasers is characterised, binned by threshold energy density and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices show that the transfer process does not incur measurable laser damage and the threshold binning can be maintained. Analysis is provided on the threshold and mode spectra of the device populations to investigate the potential for using NW lasers for integrated systems fabrication.

preprint2020arXiv

Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy

We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is essential to the development of crystal phase engineering of this important III-V semiconductor.

preprint2017arXiv

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional electron microscopy. The non-destructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control and 4D imaging of phase reaction processes on the nanometer-ultrafast time scale open new venues for engineering various reactions in a wide variety of other systems.

preprint2015arXiv

Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires

We investigate the dynamics of high aspect ratio nanowires trapped axially in a single gradient force optical tweezers. A power spectrum analysis of the Brownian dynamics reveals a broad spectral resonance of the order of a kHz with peak properties that are strongly dependent on the input trapping power. Modelling of the dynamical equations of motion of the trapped nanowire that incorporate non-conservative effects through asymmetric coupling between translational and rotational degrees of freedom provides excellent agreement with the experimental observations. An associated observation of persistent cyclical motion around the equilibrium trapping position using winding analysis provides further evidence for the influence of non-conservative forces.

preprint2014arXiv

Atomically Thin Optical Lenses and Gratings

Two-dimensional (2D) materials have emerged as promising candidates for miniaturized optoelectronic devices, due to their strong inelastic interactions with light. On the other hand, a miniaturized optical system also requires strong elastic light-matter interactions to control the flow of light. Here, we report giant optical path length (OPL) from a single-layer molybdenum disulfide (MoS2), which is around one order of magnitude larger than that from a single-layer graphene. Using such giant OPL to engineer the phase front of optical beams, we demonstrated, to the best of our knowledge, the world's thinnest optical lens consisting of a few layers of MoS2 less than 6.3 nm thick. Moreover, we show that MoS2 has much better dielectric response than good conductor (like gold) and other dielectric materials (like Si, SiO2 or graphene). By taking advantage of the giant elastic scattering efficiency in ultra-thin high-index 2D materials, we demonstrated high-efficiency gratings based on a single- or few-layers of MoS2. The capability of manipulating the flow of light in 2D materials opens an exciting avenue towards unprecedented miniaturization of optical components and the integration of advanced optical functionalities.

preprint2014arXiv

Carrier thermalization dynamics in single Zincblende and Wurtzite InP nanowires

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band to band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs. InP NW) and less strongly on crystal structure (ZB vs. WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NW reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures which lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

preprint2013arXiv

Co-development of significant elastic and reversible plastic deformation in nanowires

When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deformation. Once plastic deformation is initiated, further elastic deformation is negligible owing to the limited increase in the flow stress caused by work hardening. Here we present experimental evidence and quantitative analysis of simultaneous development of significant elastic deformation and dislocation-based plastic deformation in single crystal GaAs nanowires (NWs) under bending deformation up to a total strain of ~ 6%. The observation is in sharp contrast to the previous notions regarding the deformation modes. Most of the plastic deformation recovers spontaneously when the external stress is released, and therefore resembles an elastic deformation process.

preprint2013arXiv

Electro-optical switching by liquid-crystal controlled metasurfaces

We study the optical response of a metamaterial surface created by a lattice of split-ring resonators covered with a nematic liquid crystal and demonstrate millisecond timescale switching between electric and magnetic resonances of the metasurface. This is achieved due to a high sensitivity of liquid-crystal molecular reorientation to the symmetry of the metasurface as well as to the presence of a bias electric field. Our experiments are complemented by numerical simulations of the liquid-crystal reorientation.

preprint2013arXiv

Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.

preprint2012arXiv

Tapered Yagi-Uda Nanoantennas for Broadband Unidirectional Emission

We demonstrate experimentally the operation of tapered Yagi-Uda nanoantennas for broadband unidirectional emission enhancement. The measured transmittance spectra show that, in comparison to untapered reference structures, the tapered nanoantennas exhibit distinct wide-band spectral resonances. The performed full-vectorial numerical calculations are in good qualitative agreement with the measured spectra, further revealing how the near-field profiles of the tapered nanoantennas are directly reflecting their broadband characteristics.