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Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.

preprint2013arXivOpen access
Laurens H. Willems van BeverenJeffrey C. McCallumHoe H. TanChennupati Jagadish
cond-mat.mes-hall
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Laurens H. Willems van BeverenJeffrey C. McCallumHoe H. TanChennupati Jagadish

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