Researcher profile

Chengwei Wang

Chengwei Wang contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4

Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are in general challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated on the vacuum interface of a narrow band gap semiconductor Nb2SiTe4. Interestingly, the position and splitting of QWSs could be easily manipulated via potassium (K) dosage onto the sample surface. Our results suggest Nb2SiTe4 to be an intriguing semiconductor system to study and engineer the QWSs, which has great potential in device applications.

preprint2022arXiv

VizBelle: A Design Space of Embellishments for Data Visualization

Visual embellishments, as a form of non-linguistic rhetorical figures, are used to help convey abstract concepts or attract readers' attention. Creating data visualizations with appropriate and visually pleasing embellishments is challenging since this process largely depends on the experience and the aesthetic taste of designers. To help facilitate designers in the ideation and creation process, we propose a design space, VizBelle, based on the analysis of 361 classified visualizations from online sources. VizBelle consists of four dimensions, namely, communication goal to fit user intention, object to select the target area, strategy and technique to offer potential approaches. We further provide a website to present detailed explanations and examples of various techniques. We conducted a within-subject study with 20 professional and amateur design enthusiasts to evaluate the effectiveness of our design space. Results show that our design space is illuminating and useful for designers to create data visualizations with embellishments.

preprint2020arXiv

Electronic structure of a Si-containing topological Dirac semimetal CaAl2Si2

There has been an upsurge in the discovery of topological quantum materials, where various topological insulators and semimetals have been theoretically predicted and experimentally observed. However, only very few of them contains silicon, the most widely used element in electronic industry. Recently, ternary compound CaAl2Si2 has been predicted to be a topological Dirac semimetal, hosting Lorentz-symmetry-violating quasiparticles with a strongly tilted conical band dispersion. In this work, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we investigated the comprehensive electronic structure of CaAl2Si2. A pair of topological Dirac crossings is observed along the kz direction, in good agreement with the ab initio calculations, confirming the topological Dirac semimetal nature of the compound. Our study expands the topological material family on Si-containing compounds, which have great application potential in realizing low-cost, nontoxic electronic device with topological quantum states.

preprint2020arXiv

Magnetism-induced topological transition in EuAs3

The nature of the interaction between magnetism and topology in magnetic topological semimetals remains mysterious, but may be expected to lead to a variety of novel physics. We present $ab$ $initio$ band calculations, electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements on the magnetic semimetal EuAs$_3$, demonstrating a magnetism-induced topological transition from a topological nodal-line semimetal in the paramagnetic or the spin-polarized state to a topological massive Dirac metal in the antiferromagnetic (AFM) ground state at low temperature, featuring a pair of massive Dirac points, inverted bands and topological surface states on the (010) surface. Shubnikov-de Haas (SdH) oscillations in the AFM state identify nonzero Berry phase and a negative longitudinal magnetoresistance ($n$-LMR) induced by the chiral anomaly, confirming the topological nature predicted by band calculations. When magnetic moments are fully polarized by an external magnetic field, an unsaturated and extremely large magnetoresistance (XMR) of $\sim$ 2$\times10^5$ % at 1.8 K and 28.3 T is observed, likely arising from topological protection. Consistent with band calculations for the spin-polarized state, four new bands in quantum oscillations different from those in the AFM state are discerned, of which two are topologically protected. Nodal-line structures at the $Y$ point in the Brillouin zone (BZ) are proposed in both the spin-polarized and paramagnetic states, and the latter is proven by ARPES. Moreover, a temperature-induced Lifshitz transition accompanied by the emergence of a new band below 3 K is revealed. These results indicate that magnetic EuAs$_3$ provides a rich platform to explore exotic physics arising from the interaction of magnetism with topology.