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Charlotte Sanders

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3 publications

preprint2019arXiv

Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser

Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical and structural analysis requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. The PG2 beamline at FLASH (DESY, Hamburg) provides a high pulse rate of 5000 pulses/s, 60 fs pulse duration and 40 meV bandwidth in an energy range of 25-830 eV with a photon beam size down to 50 microns in diameter. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that combines FEL capabilities together with a multidimensional recording scheme for photoemission studies. We use a full-field imaging momentum microscope with time-of-flight energy recording as the detector for mapping of 3D band structures in (kxk_x, kyk_y, EE) parameter space with unprecedented efficiency. Our instrument can image full surface Brillouin zones with up to 7 Å −1^{-1} diameter in a binding-energy range of several eV, resolving about 2.5×1052.5\times10^5 data voxels. As an example, we present results for the ultrafast excited state dynamics in the model van der Waals semiconductor WSe2_2.

preprint2018arXiv

Pseudodoping of Metallic Two-Dimensional Materials by The Supporting Substrates

We demonstrate how hybridization between a two-dimensional material and its substrate can lead to an apparent heavy doping, using the example of monolayer TaS2_2 grown on Au(111). Combining ab-initio\textit{ab-initio} calculations, scanning tunneling spectroscopy experiments and a generic model, we show that strong changes in Fermi areas can arise with much smaller actual charge transfer. This mechanism, which we refer to as pseudodoping, is a generic effect for metallic two-dimensional materials which are either adsorbed to metallic substrates or embedded in vertical heterostructures. It explains the apparent heavy doping of TaS2_2 on Au(111) observed in photoemission spectroscopy and spectroscopic signatures in scanning tunneling spectroscopy. Pseudodoping is associated with non-linear energy-dependent shifts of electronic spectra, which our scanning tunneling spectroscopy experiments reveal for clean and defective TaS2_2 monolayer on Au(111). The influence of pseudodoping on the formation of charge ordered, magnetic, or superconducting states is analyzed.

preprint2015arXiv

Growth and electronic structure of epitaxial single-layer WS2_2 on Au(111)

Large-area single-layer WS2_2 is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H2_2S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at Kˉ\bar{K} is found to be significantly higher than at Γˉ\barΓ. The observed dispersion around Kˉ\bar{K} is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at Γˉ\barΓ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the Kˉ\bar{K} points, with a maximum splitting of 419(11)~meV. The valence band dispersion around Kˉ\bar{K} is found to be highly anisotropic with spin-branch dependent effective hole masses of 0.40(02)me0.40(02)m_e and 0.57(09)me0.57(09)m_e for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS2_2 a promising alternative to the widely studied MoS2_2 for applications in electronics, spintronics and valleytronics.

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