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Charlotte E. Sanders

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4 publications

preprint2016arXiv

Crystalline and electronic structure of single-layer TaS2_2

Single-layer TaS2_2 is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single layer TaS2_2 is found to be strongly n-doped, with a carrier concentration of 0.3(1) extra electrons per unit cell. No superconducting or charge density wave state is observed by scanning tunneling microscopy at temperatures down to 4.7 K.

preprint2016arXiv

Reconstruction-induced trefoil knot Fermi contour of Au(111)

Using angle-resolved photoemission spectroscopy (ARPES), we study the effect of the so-called herringbone reconstruction of Au(111) on the dispersion of the free electron-like surface state. While earlier ARPES investigations have only reported a minor interplay of the surface state dispersion and the underlying reconstruction, we show that the uniaxial lattice distortion and the thereby changed reciprocal lattice for the first atomic layer leads to distinct surface state dispersions around the first order reciprocal lattice points of the three domains, creating a constant energy surface resembling a trefoil knot. The findings resolve the long-standing discrepancy between, on one hand, the reconstruction-induced surface state modifications reported in scanning tunnelling microscopy and first principle calculations and, on the other hand, their conspicuous absence in photoemission.

preprint2016arXiv

Single-layer MoS2_2 on Au(111): band gap renormalization and substrate interaction

The electronic structure of epitaxial single-layer MoS2_2 on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at Kˉ\bar{K} and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At Γˉ\barΓ, the valence band maximum has a significantly higher binding energy than in the free MoS2_2 layer and the expected spin-degeneracy of the uppermost valence band at the Mˉ\bar{M} point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS2_2 orbitals with the substrate.

preprint2015arXiv

Synthesis of Epitaxial Single-Layer MoS2_2 on Au(111)

We present a method for synthesizing large area epitaxial single-layer MoS2_2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2_2 islands to a continuous MoS2_2 layer. An exceptionally good control over the MoS2_2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2_2 nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS2_2 islands, we identify domains rotated by 60∘^{\circ} that lead to atomically sharp line defects at domain boundaries. As the MoS2_2 coverage approaches the limit of a complete single-layer, the formation of bilayer MoS2_2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2_2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2_2 layer from vacuum is not found to affect its quality.

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