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Researcher profile

Koji Muraki

Koji Muraki contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2022arXiv

Non-uniform heat redistribution among multiple channels in the integer quantum Hall regime

Heat transport in multiple quantum-Hall edge channels at Landau-level filling factor nu = 2, 4, and 8 is investigated with a quantum point contact as a heat generator and a quantum dot as a local thermometer. Heat distribution among the channels remains highly non-uniform, which can be understood with the plasmon eigenmodes of the multiple channels. The heat transport can be controlled with another quantum point contact as a quantized heat valve, as manifested by stepwise increases of heat current at the thermometer. This encourages developing integrated heat circuits with quantum-Hall edge channels.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT leads to a lower noise floor in the experimental setup and enables more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Screening effects of superlattice doping on the mobility of GaAs two-dimensional electron system revealed by in-situ gate control

We investigate the screening effects of excess electrons in the doped layer on the mobility of a GaAs two-dimensional electron system (2DES) with a modern architecture using short-period superlattice (SL) doping. By controlling the density of excess electrons in the SL with a top gate while keeping the 2DES density constant with a back gate, we are able to compare 2DESs with the same density but different degrees of screening using one sample. Using a field-penetration technique and circuit-model analysis, we determine the density of states and excess electron density in the SL, quantities directly linked to the screening capability. The obtained relation between mobility and excess electron density is consistent with the theory taking into account the screening by the excess electrons in the SL. The quantum lifetime determined from Shubnikov-de Haas oscillations is much lower than expected from theory and did not show a discernible change with excess electron density.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determination of $g$-factor in InAs two-dimensional electron system by capacitance spectroscopy

We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an in-plane magnetic field shows a double-step feature that indicates the Zeeman splitting of the subband edge. The method allows for simultaneous and independent determination of $|g^\ast|$ and effective mass $m^\ast$. Data suggest that the biaxial tensile strain in the InAs layer has considerable impacts on both $m^\ast$ and $g^\ast$. Our method provides a means to determine $|g^\ast|$ that is complementary to the commonly used coincidence technique.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantized charge fractionalization at quantum Hall Y junctions in the disorder-dominated regime

Fractionalization is a phenomenon where an elementary excitation partitions into several pieces. This picture explains non-trivial transport through a junction of one-dimensional edge channels defined by topologically distinct quantum Hall states, for example, a hole-conjugate state at Landau-level filling factor $ν$ = 2/3. Here we employ a time-resolved scheme to identify an elementary fractionalization process; injection of charge q from a non-interaction region into an interacting and scattering region of one-dimensional channels results in the formation of a collective excitation with charge $(1-\textit{r})\textit{q}$ by reflecting fractionalized charge $\textit{rq}$. The fractionalization factors, $\textit{r}$ = 0.34$\pm$0.03 for $ν$ = 2/3 and $\textit{r}$ = 0.49$\pm$0.03 for $ν$ = 2, are consistent with the quantized values of 1/3 and 1/2, respectively, which are expected in the disorder dominated regime. The scheme can be used for generating and transporting fractionalized charges with a well-defined time course along a well-defined path.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ballistic hot-electron transport in a quantum Hall edge channel defined by a double gate

Ballistic transport of hot electrons in a quantum Hall edge channel is attractive for studying electronic analog of quantum optics, where the edge potential profile is an important parameter that governs the charge velocity and scattering by longitudinal-optical (LO) phonons. Here we use a parallel double gate to control the electric field of the edge potential, and investigate the ballistic length of the channel by using hot-electron spectroscopy. The ballistic length is significantly enhanced by reducing the LO phonon scattering rate in the tailored potential.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Two-step breakdown of a local v = 1 quantum Hall state

We report quantum Hall effect breakdown of a local filling factor v_local = 1 state formed in a bulk v_bulk = 2 system in an AlGaAs/GaAs heterostructure. When a finite source-drain bias is applied across the local system, the breakdown occurs in two steps. At low bias, quantized conductance through the v_local = 1 system breaks down due to inter-edge electron tunneling. At high bias, the incompressibility of the v_local = 1 system breaks down because the spin gap closes. The two steps are resolved by combining measurements of resistively detected nuclear magnetic resonance and shot noise, which allows one to evaluate electron spin polarization in the local system and spin-dependent charge transport through the system, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Gate-dependent spin-orbit coupling in multi-electron carbon nanotubes

Understanding how the orbital motion of electrons is coupled to the spin degree of freedom in nanoscale systems is central for applications in spin-based electronics and quantum computation. We demonstrate this coupling of spin and orbit in a carbon nanotube quantum dot in the general multi-electron regime in presence of finite disorder. Further, we find a strong systematic dependence of the spin-orbit coupling on the electron occupation of the quantum dot. This dependence, which even includes a sign change is not demonstrated in any other system and follows from the curvature-induced spin-orbit split Dirac-spectrum of the underlying graphene lattice. Our findings unambiguously show that the spin-orbit coupling is a general property of nanotube quantum dots which provide a unique platform for the study of spin-orbit effects and their applications.

0 citations0 reviewsNo code linkedOpen access