BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Koji Muraki

Koji Muraki appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

Catalog footprint

What is connected

26works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

26 published item(s)

preprint2022arXiv

Non-uniform heat redistribution among multiple channels in the integer quantum Hall regime

Heat transport in multiple quantum-Hall edge channels at Landau-level filling factor nu = 2, 4, and 8 is investigated with a quantum point contact as a heat generator and a quantum dot as a local thermometer. Heat distribution among the channels remains highly non-uniform, which can be understood with the plasmon eigenmodes of the multiple channels. The heat transport can be controlled with another quantum point contact as a quantized heat valve, as manifested by stepwise increases of heat current at the thermometer. This encourages developing integrated heat circuits with quantum-Hall edge channels.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT leads to a lower noise floor in the experimental setup and enables more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Screening effects of superlattice doping on the mobility of GaAs two-dimensional electron system revealed by in-situ gate control

We investigate the screening effects of excess electrons in the doped layer on the mobility of a GaAs two-dimensional electron system (2DES) with a modern architecture using short-period superlattice (SL) doping. By controlling the density of excess electrons in the SL with a top gate while keeping the 2DES density constant with a back gate, we are able to compare 2DESs with the same density but different degrees of screening using one sample. Using a field-penetration technique and circuit-model analysis, we determine the density of states and excess electron density in the SL, quantities directly linked to the screening capability. The obtained relation between mobility and excess electron density is consistent with the theory taking into account the screening by the excess electrons in the SL. The quantum lifetime determined from Shubnikov-de Haas oscillations is much lower than expected from theory and did not show a discernible change with excess electron density.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determination of $g$-factor in InAs two-dimensional electron system by capacitance spectroscopy

We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an in-plane magnetic field shows a double-step feature that indicates the Zeeman splitting of the subband edge. The method allows for simultaneous and independent determination of $|g^\ast|$ and effective mass $m^\ast$. Data suggest that the biaxial tensile strain in the InAs layer has considerable impacts on both $m^\ast$ and $g^\ast$. Our method provides a means to determine $|g^\ast|$ that is complementary to the commonly used coincidence technique.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantized charge fractionalization at quantum Hall Y junctions in the disorder-dominated regime

Fractionalization is a phenomenon where an elementary excitation partitions into several pieces. This picture explains non-trivial transport through a junction of one-dimensional edge channels defined by topologically distinct quantum Hall states, for example, a hole-conjugate state at Landau-level filling factor $ν$ = 2/3. Here we employ a time-resolved scheme to identify an elementary fractionalization process; injection of charge q from a non-interaction region into an interacting and scattering region of one-dimensional channels results in the formation of a collective excitation with charge $(1-\textit{r})\textit{q}$ by reflecting fractionalized charge $\textit{rq}$. The fractionalization factors, $\textit{r}$ = 0.34$\pm$0.03 for $ν$ = 2/3 and $\textit{r}$ = 0.49$\pm$0.03 for $ν$ = 2, are consistent with the quantized values of 1/3 and 1/2, respectively, which are expected in the disorder dominated regime. The scheme can be used for generating and transporting fractionalized charges with a well-defined time course along a well-defined path.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ballistic hot-electron transport in a quantum Hall edge channel defined by a double gate

Ballistic transport of hot electrons in a quantum Hall edge channel is attractive for studying electronic analog of quantum optics, where the edge potential profile is an important parameter that governs the charge velocity and scattering by longitudinal-optical (LO) phonons. Here we use a parallel double gate to control the electric field of the edge potential, and investigate the ballistic length of the channel by using hot-electron spectroscopy. The ballistic length is significantly enhanced by reducing the LO phonon scattering rate in the tailored potential.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Two-step breakdown of a local v = 1 quantum Hall state

We report quantum Hall effect breakdown of a local filling factor v_local = 1 state formed in a bulk v_bulk = 2 system in an AlGaAs/GaAs heterostructure. When a finite source-drain bias is applied across the local system, the breakdown occurs in two steps. At low bias, quantized conductance through the v_local = 1 system breaks down due to inter-edge electron tunneling. At high bias, the incompressibility of the v_local = 1 system breaks down because the spin gap closes. The two steps are resolved by combining measurements of resistively detected nuclear magnetic resonance and shot noise, which allows one to evaluate electron spin polarization in the local system and spin-dependent charge transport through the system, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Andreev reflection and bound state formation in a ballistic two-dimensional electron gas probed by a quantum point contact

We study coherent transport and bound-state formation of Bogoliubov quasiparticles in a high-mobility In$_{0.75}%$Ga$_{0.25}$As two-dimensional electron gas (2DEG) coupled to a superconducting Nb electrode by means of a quantum point contact (QPC) as a tunable single-mode probe. Below the superconducting critical temperature of Nb, the QPC shows a single-channel conductance greater than the conductance quantum $2e^{2}/h$ at zero bias, which indicates the presence of Andreev-reflected quasiparticles, time-reversed states of the injected electron, returning back through the QPC. The marked sensitivity of the conductance enhancement to voltage bias and perpendicular magnetic field suggests a mechanism analogous to reflectionless tunneling--a hallmark of phase-coherent transport, with the boundary of the 2DEG cavity playing the role of scatters. When the QPC transmission is reduced to the tunneling regime, the differential conductance vs bias voltage probes the single-particle density of states in the proximity area. Measured conductance spectra show a double peak within the superconducting gap of Nb, demonstrating the formation of Andreev bound states in the 2DEG. Both of these results, obtained in the open and closed geometries, underpin the coherent nature of quasiparticles, i.e., phase-coherent Andreev reflection at the InGaAs/Nb interface and coherent propagation in the ballistic 2DEG.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Engineering quantum spin Hall insulators by strained-layer heterostructures

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band structures, and have been proposed as a platform for exploring spintronics applications and exotic quasiparticles related to the spin-helical edge modes. Despite theoretical proposals for various materials, however, experimental demonstrations of QSHIs have so far been limited to two systems--HgTe/CdTe and InAs/GaSb--both of which are lattice-matched semiconductor heterostructures. Here we report transport measurements in yet another realization of a band-inverted heterostructure as a QSHI candidate--InAs/In$_{x}$Ga$_{1-x}$Sb with lattice mismatch. We show that the compressive strain in the In$_{x}$Ga$_{1-x}$Sb layer enhances the band overlap and energy gap. Consequently, high bulk resistivity, two orders of magnitude higher than for InAs/GaSb, is obtained deep in the band-inverted regime. The strain also enhances bulk Rashba spin-orbit splitting, leading to an unusual situation where the Fermi level crosses only one spin branch for electronlike and holelike bands over a wide density range. These properties make this system a promising platform for robust QSHIs with unique spin properties and demonstrate strain to be an important ingredient for tuning spin-orbit interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces charged impurities with a density of approximately $6\times 10^{12}$ cm$^{-2}$; setting the upper limit of the mobility in graphene to 3000 cm$^2$/Vs. At higher temperature, phonons in the ionic liquid further reduce the mobility, making its upper limit 2000 cm$^2$/Vs at room temperature. Since the degree of disorder is independent of the base material, these results are valuable towards understanding disorder effects in general devices using electrolyte gating.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Single-edge transport in an InAs/GaSb quantum spin Hall insulator

We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly asymmetric current paths, we electrically isolate a single edge channel of the two-dimensional topological insulator from the other edge. This enables us to probe a single edge by multiterminal measurements. Both two-terminal and four-terminal resistances show a nearly quantized plateau around $h/e^2$ for a 4-$μ$m-long edge, indicating quasiballistic transport. Our approach is advantageous in that it allows us to gain insight into a microscopic region from local measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Shot-noise evidence of fractional quasiparticle creation in a local fractional quantum Hall state

We have experimentally identified fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact (QPC) in an integer quantum Hall (IQH) system. Shot-noise measurements reveal a clear transition from elementary-charge tunneling at low bias to fractional-charge tunneling at high bias. The fractional shot noise is proportional to T1(1 ? T1) over a wide range of T1, where T1 is the transmission probability of the IQH edge channel. This binomial distribution indicates that fractional quasiparticles emerge from the IQH state to be transmitted through the local FQH state. The study of this tunneling process will enable us to elucidate the dynamics of Laughlin quasiparticles in FQH systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Cooperative Lifting of Spin Blockade in a Three-Terminal Triple Quantum Dot

We report measurements of multi-path transport through a triple quantum dot (TQD) in the few-electron regime using a GaAs three-terminal device with a separate lead attached to each dot. When two paths reside inside the transport window and are simultaneously spin-blockaded, the leak currents through both paths are significantly enhanced. We suggest that the transport processes in the two paths cooperate to lift the spin blockade. Fine structures in transport spectra indicate that different kinds of cooperative mechanisms are involved, depending on the details of the three-electron spin states governed by the size of exchange splitting relative to nuclear spin fluctuations. Our results indicate that a variety of correlation phenomena can be explored in three-terminal TQDs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Distributed-element circuit model of edge magnetoplasmon transport

We report experimental and theoretical studies of edge magnetoplasmon (EMP) transport in quantum Hall (QH) devices. We develop a model that allows us to calculate the transport coefficients of EMPs in QH devices with various geometries. In our model, a QH system is described as a chiral distributed-element (CDE) circuit, where the effects of Coulomb interaction are represented by an electrochemical capacitance distributed along unidirectional transmission lines. We measure the EMP transport coefficients through single- and coupled-edge channels, a quantum point contact, and single- and double-cavity structures. These measured transmission spectra can be reproduced well by simulations using the corresponding CDE circuits. By fitting the experimental results with the simulations, we deduce the circuit parameters that characterize the electrostatic environment around the edge channels in a realistic QH system. The observed gate-voltage dependences of the EMP transport properties in gate-defined structures are explained in terms of the gate tuning of the circuit parameters in CDE circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Edge Channel Transport in InAs/GaSb Topological Insulating Phase

Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$μ$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance measurements with various current/voltage contact configurations reveal that the transport is dominated by edge channels with negligible bulk contribution. Systematic non-local measurements allow us to extract the resistance of individual edge channels, revealing sharp resistance uctuations indicative of inelastic scattering. Our results show that the InAs/GaSb system can be tailored to have conducting edge channels while keeping a gap in the bulk region and provide a way of studying 2D topological insulators even when quantized transport is absent.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fractionalized Wave Packets from an Artificial Tomonaga-Luttinger Liquid

The model of interacting fermion systems in one dimension known as Tomonaga-Luttinger liquid (TLL) provides a simple and exactly solvable theoretical framework, predicting various intriguing physical properties. Evidence of TLL has been observed as power-law behavior in the electronic transport and momentum-resolved spectroscopy on various types of one-dimensional (1D) conductors. However, these measurements, which rely on dc transport involving tunneling processes, cannot identify the eigenmodes of the TLL, i.e., collective excitations characterized by non-trivial effective charge e* and charge velocity v*. The elementary process of charge fractionalization, a phenomenon predicted to occur at the junction of a TLL and non-interacting leads, has not been observed. Here we report time-resolved transport measurements on an artificial TLL comprised of coupled integer quantum Hall edge channels, successfully identifying single charge fractionalization processes. An electron wave packet with charge e incident from a non-interacting region breaks up into several fractionalized charge wave packets at the edges of the artificial TLL region, from which e* and v* can be directly evaluated. These results are informative for elucidating the nature of TLLs and low-energy excitations in the edge channels.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures

We study low-frequency noise in current passing through quantum point contacts fabricated from several GaAs/AlGaAs heterostructures with different layer structures and fabrication processes. In contrast to previous reports, there is no gate-dependent random telegraph noise (RTN) originating from tunneling through a Schottky barrier in devices fabricated using the standard low-damage process. Gate-dependent RTN appears only in devices fabricated with a high-damage process that induces charge trap sites. We show that the insertion of AlAs/GaAs superlattices in the AlGaAs barrier helps to suppress trap formation. Our results enable the fabrication of damage-resistant and thus low-noise devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Shot noise spectroscopy on a semiconductor quantum dot in the elastic and inelastic cotunneling regimes

We report shot noise spectroscopy on a semiconductor quantum dot in a cotunneling regime. The DC conductance measurements show clear signatures of both elastic and inelastic cotunneling transport inside a Coulomb diamond. We observed Poissonian shot noise with the Fano factor $F\approx 1$ in the elastic cotunneling regime, and super-Poissonian Fano factor $1<F<3$ in the inelastic cotunneling regime. The differences in the value of the Fano factor between elastic and inelastic processes reveal the microscopic mechanisms involved in the cotunneling transport.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of Hysteretic Transport Due to Dynamic Nuclear Spin Polarization in a GaAs Lateral Double Quantum Dot

We report a new transport feature in a GaAs lateral double quantum dot that emerges only for magnetic field sweeps and shows hysteresis due to dynamic nuclear spin polarization (DNP). This DNP signal appears in the Coulomb blockade regime by virtue of the finite inter-dot tunnel coupling and originates from the crossing between ground levels of the spin triplet and singlet extensively used for nuclear spin manipulations in pulsed gate experiments. The unexpectedly large signal intensity is suggestive of unbalanced DNP between the two dots, which opens up the possibility of controlling electron and nuclear spin states via DC transport.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Unraveling the spin polarization of the v = 5/2 fractional quantum Hall state

The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. Yet, its microscopic origin remains unidentified, and candidate model wave functions include those with undesirable abelian statistics. Here we report direct measurements of the electron spin polarization of the v = 5/2 FQH state using resistively detected nuclear magnetic resonance (NMR). We find the system to be fully polarized, which unambiguously rules out the most-likely abelian contender and thus lends strong support for the v = 5/2 state being nonabelian. Our measurements reveal an intrinsically different nature of interaction in the first-excited Landau level underlying the physics at v = 5/2.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

$nu=5/2$ Fractional Quantum Hall State in Low-Mobility Electron Systems: Different Roles of Disorder

We report the observation of a fully developed fractional quantum Hall state at $ν=5/2$ in GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells with mobility well below $10^{7}$\thinspace cm$^{2}$/Vs. This is achieved either by strong illumination or reducing the barrier Al composition without illumination. We explain both results in terms of screening of the ionized remote impurity (RI) potential by nearby neutral shallow donors. Despite the dramatic improvement in the transport features, the energy gap $Δ_{5/2}$ is limited to a rather small value ($\sim100$ mK), which indicates that once the RI potential is well screened and the $5/2$ state emerges, the size of $Δ_{5/2}$ is limited by the mobility, i.e., by background impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin-orbital Kondo effect in a parallel double quantum dot

Transport properties of the two-orbital Kondo effect involving both spin and orbital (pseudospin) degrees of freedom were examined in a parallel double quantum dot with a sufficient interdot Coulomb interaction and negligibly small interdot tunneling. The Kondo effect was observed at the interdot Coulomb blockade region with degeneracies of both spin and orbital degrees of freedom. When the orbital degeneracy is lifted by applying a finite detuning, the Kondo resonance exhibits a triple-peak structure, indicating that both spin and orbital contributions are involved.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Gate-dependent spin-orbit coupling in multi-electron carbon nanotubes

Understanding how the orbital motion of electrons is coupled to the spin degree of freedom in nanoscale systems is central for applications in spin-based electronics and quantum computation. We demonstrate this coupling of spin and orbit in a carbon nanotube quantum dot in the general multi-electron regime in presence of finite disorder. Further, we find a strong systematic dependence of the spin-orbit coupling on the electron occupation of the quantum dot. This dependence, which even includes a sign change is not demonstrated in any other system and follows from the curvature-induced spin-orbit split Dirac-spectrum of the underlying graphene lattice. Our findings unambiguously show that the spin-orbit coupling is a general property of nanotube quantum dots which provide a unique platform for the study of spin-orbit effects and their applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Voltage-controlled Group Velocity of Edge Magnetoplasmon in the Quantum Hall Regime

We investigate the group velocity of edge magnetoplasmons (EMPs) in the quantum Hall regime by means of time-of-flight measurement. The EMPs are injected from an Ohmic contact by applying a voltage pulse, and detected at a quantum point contact by applying another voltage pulse to its gate. We find that the group velocity of the EMPs traveling along the edge channel defined by a metallic gate electrode strongly depends on the voltage applied to the gate. The observed variation of the velocity can be understood to reflect the degree of screening caused by the metallic gate, which damps the in-plane electric field and hence reduces the velocity. The degree of screening can be controlled by changing the distance between the gate and the edge channel with the gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

We propose and demonstrate wide-band capacitance measurements on a semiconductor double-quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we perform on-chip lock-in detection of the capacitance associated with the single-electron motion over a wide frequency range from hertz to a few ten gigahertz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.

0 citations0 reviewsNo code linkedOpen access