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Changyi Yang

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Published work

5 published item(s)

preprint2026arXiv

Length Value Model: Scalable Value Pretraining for Token-Level Length Modeling

Token serves as the fundamental unit of computation in modern autoregressive models, and generation length directly influences both inference cost and reasoning performance. Despite its importance, existing approaches lack fine-grained length modeling, operating primarily at the coarse-grained sequence level. We introduce the Length Value Model (LenVM), a token-level framework that models the remaining generation length. By formulating length modeling as a value estimation problem and assigning a constant negative reward to each generated token, LenVM predicts a bounded, discounted return that serves as a monotone proxy for the remaining generation horizon. This formulation yields supervision that is annotation-free, dense, unbiased, and scalable. Experiments on LLMs and VLMs demonstrate LenVM provides a highly effective signal at inference time. On the LIFEBench exact length matching task, applying LenVM to a 7B model improves the length score from 30.9 to 64.8, significantly outperforming frontier closed-source models. Furthermore, LenVM enables continuous control over the trade off between performance and efficiency. On GSM8K at a budget of 200 tokens, LenVM maintains 63% accuracy compared to 6 percent for token budget baseline. It also accurately predicts total generation length from the prompt boundary. Finally, LenVM's token-level values offer an interpretable view of generation dynamics, revealing how specific tokens shift reasoning toward shorter or longer regimes. Results demonstrate that LenVM supports a broad range of applications and token length can be effectively modeled as a token-level value signal, highlighting the potential of LenVM as a general framework for length modeling and as a length-specific value signal that could support future RL training. Code is available at https://github.com/eric-ai-lab/Length-Value-Model.

preprint2014arXiv

Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors

In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function of the device geometry, the transport parameters and the generation profile. Hence this charge sharing effect allows the signal from each sensitive electrode to provide information about the electrical characteristics of the device, as well as information on the location and the profile of each ionization track. The effectiveness of such approach was recently demonstrated in Ion Beam Induced Charge (IBIC) experiments carried out using a 2 MeV He microbeam scanning over a sub-100 lm scale silicon device, where the ion strike location point was evaluated through a comparative analysis of the charge induced in two independent surface electrodes coupled to independent data acquisition systems [2]. In this report, we show that the Monte Carlo method [3] can be efficiently exploited to simulate this IBIC experiment and to model the experimental data, shedding light on the role played by carrier diffusion, electronic noise and ion beam spot size on the induction of charge in the sensitive electrodes. Moreover, the Monte Carlo method shows that information on the ion strike position can be obtained from the charge signals from the sensitive electrodes.

preprint2010arXiv

Single-shot readout of an electron spin in silicon

The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.

preprint2010arXiv

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

preprint2009arXiv

Electron tunnel rates in a donor-silicon single electron transistor hybrid

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.