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Andrew S. Dzurak

Andrew S. Dzurak appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.other

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Published work

32 published item(s)

preprint2025arXiv

Scalable entanglement of nuclear spins mediated by electron exchange

The use of nuclear spins for quantum computation is limited by the difficulty in creating genuine quantum entanglement between distant nuclei. Current demonstrations of nuclear entanglement in semiconductors rely upon coupling the nuclei to a common electron, which is not a scalable strategy. Here we demonstrate a two-qubit Control-Z logic operation between the nuclei of two phosphorus atoms in a silicon device, separated by up to 20 nanometers. Each atoms binds separate electrons, whose exchange interaction mediates the nuclear two-qubit gate. We prepare and measure a nuclear Bell state with a fidelity of 76 +/- 5 $\%$ and a concurrence of 0.67 +/- 0.05. With this method, future progress in scaling up semiconductor spin qubits can be extended to the development of nuclear-spin based quantum computers.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

An electrically-driven single-atom `flip-flop' qubit

The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

On-demand electrical control of spin qubits

Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Precision tomography of a three-qubit donor quantum processor in silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Computation Protocol for Dressed Spins in a Global Field

Spin qubits are contenders for scalable quantum computation because of their long coherence times demonstrated in a variety of materials, but individual control by frequency-selective addressing using pulsed spin resonance creates severe technical challenges for scaling up to many qubits. This individual resonance control strategy requires each spin to have a distinguishable frequency, imposing a maximum number of spins that can be individually driven before qubit crosstalk becomes unavoidable. Here we describe a complete strategy for controlling a large array of spins in quantum dots dressed by an on-resonance global field, namely a field that is constantly driving the spin qubits, to dynamically decouple from the effects of background magnetic field fluctuations. This approach -- previously implemented for the control of single electron spins bound to electrons in impurities -- is here harmonized with all other operations necessary for universal quantum computing with spins in quantum dots. We define the logical states as the dressed qubit states and discuss initialization and readout utilizing Pauli spin blockade, as well as single- and two-qubit control in the new basis. Finally, we critically analyze the limitations imposed by qubit variability and potential strategies to improve performance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon

Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling between remote spins mediated by a third idle electron that bridges the distance between quantum dots. We experimentally demonstrate direct exchange coupling and provide evidence for second neighbour mediated superexchange in a linear array of three single-electron spin qubits in silicon, inferred from the electron spin resonance frequency spectra. We confirm theoretically through atomistic modeling that the device geometry only allows for sizeable direct exchange coupling for neighbouring dots, while next nearest neighbour coupling cannot stem from the vanishingly small tail of the electronic wavefunction of the remote dots, and is only possible if mediated.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A silicon quantum-dot-coupled nuclear spin qubit

Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those in single atom dopants or crystal defects. However, establishing long-range interactions between multiple dopants or defects is challenging. Conversely, in lithographically-defined quantum dots, tuneable interdot electron tunnelling allows direct coupling of electron spin-based qubits in neighbouring dots. Moreover, compatibility with semiconductor fabrication techniques provides a compelling route to scaling to large numbers of qubits. Unfortunately, hyperfine interactions are typically too weak to address single nuclei. Here we show that for electrons in silicon metal-oxide-semiconductor quantum dots the hyperfine interaction is sufficient to initialise, read-out and control single silicon-29 nuclear spins, yielding a combination of the long coherence times of nuclear spins with the flexibility and scalability of quantum dot systems. We demonstrate high-fidelity projective readout and control of the nuclear spin qubit, as well as entanglement between the nuclear and electron spins. Crucially, we find that both the nuclear spin and electron spin retain their coherence while moving the electron between quantum dots, paving the way to long range nuclear-nuclear entanglement via electron shuttling. Our results establish nuclear spins in quantum dots as a powerful new resource for quantum processing.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Coherent electrical control of a single high-spin nucleus in silicon

Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P qubit in enriched $^{28}$Si, we show that the abnormally long $T_2^*$ is due to the controllable freezing of the dynamics of the residual $^{29}$Si nuclei close to the donor. Our conclusions are supported by a nearly parameter-free modeling of the $^{29}$Si nuclear spin dynamics, which reveals the degree of back-action provided by the electron spin as it interacts with the nuclear bath. This study clarifies the limits of ergodic assumptions in analyzing many-body spin-problems under conditions of strong, frequent measurement, and provides novel strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A Dressed Spin Qubit in Silicon

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin

We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optimization of a solid-state electron spin qubit using Gate Set Tomography

State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography (GST) is one such protocol designed to give detailed characterization of as-built qubits. We implemented GST on a high-fidelity electron-spin qubit confined by a single $^{31}$P atom in $^{28}$Si. The results reveal systematic errors that a randomized benchmarking analysis could measure but not identify, whereas GST indicated the need for improved calibration of the length of the control pulses. After introducing this modification, we measured a new benchmark average gate fidelity of $99.942(8)\%$, an improvement on the previous value of $99.90(2)\%$. Furthermore, GST revealed high levels of non-Markovian noise in the system, which will need to be understood and addressed when the qubit is used within a fault-tolerant quantum computation scheme.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Three-waveform bidirectional pumping of single electrons with a silicon quantum dot

Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon quantum dot single-electron pump with radio frequency control over the transparencies of entrance and exit barriers as well as the dot potential. We show that our driving protocol leads to robust bidirectional pumping: one can conveniently reverse the direction of the quantized current by changing only the phase shift of one driving waveform with respect to the others. We also study the improvement in the robustness of the current quantization owing to the introduction of three control voltages in comparison with the two-waveform driving. We anticipate that this pumping technique may be used in the future to perform error counting experiments by pumping the electrons into and out of a reservoir island monitored by a charge sensor.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Bell's inequality violation with spins in silicon

Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagged as a single-number benchmark for the performance of quantum computing devices. Here we demonstrate deterministic, on-demand generation of two-qubit entangled states of the electron and the nuclear spin of a single phosphorus atom embedded in a silicon nanoelectronic device. By sequentially reading the electron and the nucleus, we show that these entangled states violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher value of 2.70(9) is obtained by mapping the parity of the two-qubit state onto the nuclear spin, which allows for high-fidelity quantum non-demolition measurement (QND) of the parity. Furthermore, we complement the Bell inequality entanglement witness with full two-qubit state tomography exploiting QND measurement, which reveals that our prepared states match the target maximally entangled Bell states with $>$96\% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom, and show that this system is able to maintain its simultaneously high initialization, manipulation and measurement fidelities past the single-qubit regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrically controlling single spin qubits in a continuous microwave field

Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron counting in a silicon single-electron pump

We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million. Single-shot detection of electrons pumped into a reservoir dot is performed using a capacitively coupled single-electron transistor. We extract the full probability distribution of the transfer of n electrons per pumping cycle for n = 0, 1, 2, 3, and 4. We find that the probabilities extracted from the counting experiment are in agreement with direct current measurements in a broad range of dc electrochemical potentials of the pump. The electron counting technique is also used to confirm the improving robustness of the pumping mechanism with increasing electrostatic confinement of the quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge Offset Stability in Si Single Electron Devices with Al Gates

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Coherent Control of a Single Silicon-29 Nuclear Spin Qubit

Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Single-shot readout and relaxation of singlet/triplet states in exchange-coupled $^{31}$P electron spins in silicon

We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time $T_1 \approx 4$ ms at zero magnetic field agrees with the theoretical prediction for $J$-coupled $^{31}$P dimers in silicon. The time evolution of the 2-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of 2-qubit quantum logic gates with spins in silicon, and highlight the necessity to adopt gating schemes compatible with weak $J$-coupling strengths.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Storing quantum information for 30 seconds in a nanoelectronic device

The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxides and interfaces [4]. For group IV materials such as silicon, enrichment of the spin-zero 28-Si isotope drastically reduces spin-bath decoherence [5]. Experiments on bulk spin ensembles in 28-Si crystals have indeed demonstrated extraordinary coherence times [6-8]. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here we present the coherent operation of individual 31-P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28-Si substrate. We report new benchmarks for coherence time (> 30 seconds) and control fidelity (> 99.99%) of any single qubit in solid state, and perform a detailed noise spectroscopy [9] to demonstrate that -- contrary to widespread belief -- the coherence is not limited by the proximity to an interface. Our results represent a fundamental advance in control and understanding of spin qubits in nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A single-atom electron spin qubit in silicon

A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coulomb interaction and valley-orbit coupling in Si quantum dots

The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N = 4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon

The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High-fidelity readout and control of a nuclear spin qubit in silicon

A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radiofrequency (RF) pulses. For an ionized 31P donor we find a nuclear spin coherence time of 60 ms and a 1-qubit gate control fidelity exceeding 98%. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear spin-based quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Printed Circuit Board Metal Powder Filters for Low Electron Temperatures

We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuation of a stainless steel powder filter is more than 80 dB at frequencies above 1.5 GHz. In all metal powder filters the attenuation increases with temperature. Compared to classical powder filters, the design presented here is much less laborious to fabricate and specifically the copper powder PCB-filters deliver an equal or even better performance than their classical counterparts.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Silicon Quantum Electronics

This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Single-shot readout of an electron spin in silicon

The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

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preprint2009arXiv

Electron tunnel rates in a donor-silicon single electron transistor hybrid

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.

0 citations0 reviewsNo code linkedOpen access