Researcher profile

Changdong Kim

Changdong Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mtrl-sci quant-ph

Trust snapshot

Quick read

Trust 15 - Baseline

3works

0followers

2topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2011arXiv

Highly Conductive 3D Nano-Carbon: Stacked Multilayer Graphene System with Interlayer Decoupling

We investigate electrical conduction and breakdown behavior of 3D nano-carbon-stacked multilayer graphene (s-MLG) system with complete interlayer decoupling. The s-MLG is prepared by transferring and stacking large-area CVD-grown graphene monolayers, followed by wire patterning and plasma etching. Raman spectroscopy was used to confirm the layer number. The D-band peak indicates low defect level in the samples. Electrical current stressing induced doping is performed to shift the charge-neutrality Dirac point and decrease the graphene/metal contact resistance, improving the overall electrical conduction. Breakdown experiments show the current-carrying capacity of s-MLG is largely enhanced as compared with that of monolayer graphene.

preprint2011arXiv

Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on 2D graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.

preprint2010arXiv

Sub-optical resolution of single spins using magnetic resonance imaging at room temperature in diamond

There has been much recent interest in extending the technique of magnetic resonance imaging (MRI) down to the level of single spins with sub-optical wavelength resolution. However, the signal to noise ratio for images of individual spins is usually low and this necessitates long acquisition times and low temperatures to achieve high resolution. An exception to this is the nitrogen-vacancy (NV) color center in diamond whose spin state can be detected optically at room temperature. Here we apply MRI to magnetically equivalent NV spins in order to resolve them with resolution well below the optical wavelength of the readout light. In addition, using a microwave version of MRI we achieved a resolution that is 1/270 size of the coplanar striplines, which define the effective wavelength of the microwaves that were used to excite the transition. This technique can eventually be extended to imaging of large numbers of NVs in a confocal spot and possibly to image nearby dark spins via their mutual magnetic interaction with the NV spin.