Abstract
We investigate electrical conduction and breakdown behavior of 3D nano-carbon-stacked multilayer graphene (s-MLG) system with complete interlayer decoupling. The s-MLG is prepared by transferring and stacking large-area CVD-grown graphene monolayers, followed by wire patterning and plasma etching. Raman spectroscopy was used to confirm the layer number. The D-band peak indicates low defect level in the samples. Electrical current stressing induced doping is performed to shift the charge-neutrality Dirac point and decrease the graphene/metal contact resistance, improving the overall electrical conduction. Breakdown experiments show the current-carrying capacity of s-MLG is largely enhanced as compared with that of monolayer graphene.
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