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Cem Sevik

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cond-mat.mtrl-sci cond-mat.mes-hall physics.comp-ph cond-mat.supr-con physics.optics

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preprint2026arXiv

Excitonic Landscape of Monolayer Transition-Metal Dichalcogenides: Experimental Discrepancies, Theoretical Advances, and Strain Dependence

Excitons in monolayer transition-metal dichalcogenides (TMDs) have garnered significant attention because of their large binding energies due to weakly screened Coulomb interaction, and direct bandgap at the K/K$^\prime$ point in the hexagonal Brillouin zone featuring spin-polarised bands due to spin-orbit coupling and lack of inversion symmetry. This makes them prospective for next-generation optoelectronic and quantum devices. However, despite the intense research activity, the reported values for exciton binding energies, quasiparticle gaps, and spectral features exhibit substantial variation across both experimental and theoretical studies. In this article, we present a comprehensive and critical assessment of the current understanding of excitonic properties in single-layer TMDs, integrating results from the angle-resolved photoemission spectroscopy (ARPES), photoluminescence (PL) measurements, and other experimental techniques with first-principles theoretical insights. Special emphasis is placed on the comparison and reconciliation of discrepancies observed across different experimental setups and sample qualities. Furthermore, we highlight our state-of-the-art GW-BSE calculations, which include both equilibrium and laterally strained systems, to systematically analyse the behaviour of direct and indirect excitons. By evaluating the effect of strain as a tunable control variable, we demonstrate its potential to engineer excitonic properties, supported by cross-validation against prior theoretical predictions and experimental findings. In doing so, we clarify the sources of discrepancies in the literature and offer a unified perspective on excited-state engineering strategies in two-dimensional TMDs.

preprint2022arXiv

Enhancing superconductivity in MXenes through hydrogenation

Two-dimensional transition metal carbides and nitrides (MXenes) are an emerging class of atomically-thin superconductors, whose characteristics are highly prone to tailoring by surface functionalization. Here we explore the use of hydrogen adatoms to enhance phonon-mediated superconductivity in MXenes, based on first-principles calculations combined with Eliashberg theory. We first demonstrate the stability of three different structural models of hydrogenated Mo- and W-based MXenes. Particularly high critical temperatures of over 30 K are obtained for hydrogenated Mo$_2$N and W$_2$N. Several mechanisms responsible for the enhanced electron-phonon coupling are uncovered, namely (i) hydrogen-induced changes in the phonon spectrum of the host MXene, (ii) emerging hydrogen-based phonon modes, and (iii) charge transfer from hydrogen to the MXene layer, boosting the density of states at the Fermi level. Finally, we demonstrate that hydrogen adatoms are moreover able to induce superconductivity in MXenes that are not superconducting in pristine form, such as Nb$_2$C.

preprint2020arXiv

Assessment on Thermal Transport Properties of Group-III Nitrides: A Classical Molecular Dynamics Study with Transferable Tersoff Type Inter-atomic Potentials

In this study, by means of classical molecular dynamics simulations, we investigated the thermal transport properties of hexagonal single-layer, zinc-blend and wurtzite phases of BN, AlN, and GaN crystals, which are very promising for the application and design of high-quality electronic devices. With this in mind, we generated fully transferable Tersoff-type empirical inter-atomic potential parameter sets by utilizing an optimization procedure based on particle swarm optimization. The predicted thermal properties as well as the structural, mechanical and vibrational properties of all materials are in very good agreement with existing experimental and first-principles data. The impact of isotopes on thermal transport is also investigated and between $\sim$10 and 50\% reduction in phonon thermal transport with random isotope distribution is observed in BN and GaN crystals. Our investigation distinctly shows that the generated parameter sets are fully transferable and very useful in exploring the thermal properties of systems containing these nitrides.

preprint2020arXiv

First-principles discovery of stable two-dimensional materials with high-level piezoelectric response

The rational design of two-dimensional piezoelectric materials has recently garnered great interest due to their increasing use in technological applications, including sensor technology, actuating devices, energy harvesting, and medical applications. Several materials possessing high piezoelectric response have been reported so far, but a high-throughput first-principles approach to estimate the piezoelectric potential of layered materials has not been performed yet. In this study, we systematically investigated the piezoelectric ($e_{11}$, $d_{11}$) and elastic (C$_{11}$ and C$_{12}$) properties of 128 thermodynamically stable two-dimensional (2D) semiconductor materials by employing first-principle methods. Our high-throughput approach demonstrates that the materials containing Group-\textrm{V} elements produce significantly high piezoelectric strain constants, $d_{11}$ $>$ 40 pmV$^{-1}$, and 49 of the materials considered have the $e_{11}$ coefficient higher than MoS$_{2}$ insomuch as BrSSb has one of the largest $d_{11}$ with a value of 373.0 pmV$^{-1}$. Moreover, we established a simple empirical model in order to estimate the $d_{11}$ coefficients by utilizing the relative ionic motion in the unit cell and the polarizability of the individual elements in the compounds.

preprint2016arXiv

Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.

preprint2015arXiv

Remarkable effect of stacking on the electronic and optical properties of few layer black phosphorus

The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic and opti- cal properties of black phosphorus. While trilayer black phosphorus with a particular stacking type is found to be a metal by using semilocal functionals, it is predicted to have an electronic band gap of 0.82 eV when many-body effects are taken into account within the G0W0 scheme. Though different stacking types result in similar energetics, the size of the band gap and the optical response of bilayer and trilayer phosphorene is very sensitive to the number of layers and the stacking type. Regardless of the number of layers and the type of stacking, bilayer and trilayer black phosphorus are direct band gap semiconductors whose band gaps vary within a range of 0.3 eV. Stacking arrangments different from the ground state structure in both bilayer and trilayer black phosphorus significantly modify valence bands along the zigzag direction and results in larger hole effective masses. The optical gap of bilayer (trilayer) black phosphorus varies by 0.4 (0.6) eV when changing the stacking type. Due to strong interlayer interaction, some stackings obstruct the observation of the optical excitation of bound excitons within the quasi-particle band gap. In other stackings, the binding energy of bound excitons hardly changes with the type of stacking and is found to be 0.44 (0.30) eV for bilayer (trilayer) phosphorous.

preprint2012arXiv

Assessment of the Thermal Conductivity of BN-C Nanostructures

Chemical and structural diversity present in hexagonal boron nitride ((h-BN) and graphene hybrid nanostructures provide new avenues for tuning various properties for their technological applications. In this paper we investigate the variation of thermal conductivity ($κ$) of hybrid graphene/h-BN nanostructures: stripe superlattices and BN (graphene) dots embedded in graphene (BN) are investigated using equilibrium molecular dynamics. To simulate these systems, we have parameterized a Tersoff type interaction potential to reproduce the ab initio energetics of the B-C and N-C bonds for studying the various interfaces that emerge in these hybrid nanostructures. We demonstrate that both the details of the interface, including energetic stability and shape, as well as the spacing of the interfaces in the material exert strong control on the thermal conductivity of these systems. For stripe superlattices, we find that zigzag configured interfaces produce a higher $κ$ in the direction parallel to the interface than the armchair configuration, while the perpendicular conductivity is less prone to the details of the interface and is limited by the $κ$ of h-BN. Additionally, the embedded dot structures, having mixed zigzag and armchair interfaces, affects the thermal transport properties more strongly than superlattices. Though dot radius appears to have little effect on the magnitude of reduction, we find that dot concentration (50% yielding the greatest reduction) and composition (embedded graphene dots showing larger reduction that h-BN dot) have a significant effect.