BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Ceyhun Bulutay

Ceyhun Bulutay contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.atom-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
7works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2026arXiv

Exploring Nonreciprocal Noise Transfer under Onsager-Casimir Symmetry in Synthetic-Field Optomechanics

An optomechanical system of fundamental importance consists of two intercoupled mechanical resonators, which are radiation-pressure coupled individually to a photonic cavity. This closed-loop and overall lossy configuration possesses two exceptional points (EPs) and offers the realization of synthetic magnetism, controlled by the loop phase. To elucidate the intricate role of loop phase and EPs in this setting, we analyze the noise power spectral density profiles of internal as well as output fluctuations. In the presence of a synthetic magnetic field, the nonreciprocal routing of a signal is well known. Here, we further show that this also applies to nonreciprocal backaction noise flow when the time-reversal symmetry is broken, while the Onsager-Casimir symmetry still holds. To better quantify this phenomenon, we introduce a nonreciprocity measure that contrasts the time-reversed counterparts as a function of loop phase. We observe that nonreciprocal noise flow is enhanced for smaller intermechanical couplings at the expense of lower sensitivity, whereas for sensing purposes, using a higher intermechanical coupling constant is the more viable option.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Wavelet-based Ramsey magnetometry enhancement of a single NV center in diamond

Nitrogen-vacancy (NV) centers in diamond constitute a solid-state nanosensing paradigm. Specifically for high-precision magnetometry, the so-called Ramsey interferometry is the prevalent choice where the sensing signal is extracted from time-resolved spin-state-dependent photoluminescence (PL) data. Its sensitivity is ultimately limited by the photon shot noise, which cannot be sufficiently removed by averaging or frequency filtering. Here, we propose Ramsey DC magnetometry of a single NV center enhanced by a wavelet-denoising scheme specifically tailored to suppress photon shot noise. It simply operates as a classical post-processing applied on a collected PL time series. Our implementation is based on a method that we named template margin thresholding which enables not only frequency but also time-dependent denoising. We computationally benchmark its DC magnetic field sensing signal-to-noise-ratio improvement over the raw PL data around an order of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Networks of silicon nanowires: a large-scale atomistic electronic structure analysis

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level, as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quadrupolar spectra of nuclear spins in strained InGaAs quantum dots

Self-assembled quantum dots (QDs) are born out of lattice mismatched ingredients where strain plays an indispensable role. Through the electric quadrupolar coupling, strain affects the magnetic environment as seen by the nuclear spins. To guide prospective single-QD nuclear magnetic resonance (NMR) as well as dynamic nuclear spin polarization experiments, an atomistic insight to the strain and quadrupolar field distributions is presented. A number of implications of the structural and compositional profile of the QD have been identified. A high aspect ratio of the QD geometry enhances the quadrupolar interaction. The inclined interfaces introduce biaxiality and the tilting of the major quadrupolar principal axis away from the growth axis; the alloy mixing of gallium into the QD enhances both of these features while reducing the quadrupolar energy. Regarding the NMR spectra, both Faraday and Voigt geometries are investigated, unraveling in the first place the extend of inhomogeneous broadening and the appearance of the normally-forbidden transitions. Moreover, it is shown that from the main extend of the NMR spectra the alloy mole fraction of a single QD can be inferred. By means of the element-resolved NMR intensities it is found that In nuclei has a factor of five dominance over those of As. In the presence of an external magnetic field, the borderlines between the quadrupolar and Zeeman regimes are extracted as 1.5 T for In and 1.1 T for As nuclei. At these values the nuclear spin depolarization rates of the respective nuclei get maximized due to the noncollinear secular hyperfine interaction with a resident electron in the QD.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Carrier-induced refractive index change and optical absorption in wurtzite InN and GaN: Fullband approach

Based on the full band electronic structure calculations, first we consider the effect of n-type doping on the optical absorption and the refractive index in wurtzite InN and GaN. We identify quite different dielectric response in either case; while InN shows a significant shift in the absorption edge due to n-type doping, this is masked for GaN due to efficient cancellation of the Burstein-Moss effect by the band gap renormalization. For high doping levels the intraband absorption becomes significant in InN. Furthermore, we observe that the free-carrier plasma contribution to refractive index change becomes more important than both band filling and the band gap renormalization for electron densities above 10$^{19}$~cm$^{-3}$ in GaN, and 10$^{20}$~cm$^{-3}$ in InN. As a result of the two different characteristics mentioned above, the overall change in the refractive index due to n-type doping is much higher in InN compared to GaN, which in the former exceeds 4\% for a doping of 10$^{19}$~cm$^{-3}$ at 1.55~$μ$m wavelength. Finally, we consider intrinsic InN under strong photoexcitation which introduces equal density of electron and holes thermalized to their respective band edges. The change in the refractive index at 1.55~$μ$m is observed to be similar to the n-doped case up to a carrier density of 10$^{20}$~cm$^{-3}$. However, in the photoexcited case this is now accompanied by a strong absorption in this wavelength region due to $Γ^v_5 \to Γ^v_6$ intravalence band transition. Our findings suggest that the alloy composition of In$_x$Ga$_{1-x}$N can be optimized in the indium-rich region so as to benefit from high carrier-induced refractive index change while operating in the transparency region to minimize the losses. These can have direct implications for InN-containing optical phase modulators and lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

dc-switchable and single-nanocrystal-addressable coherent population transfer

Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer recipes for the stimulated Raman adiabatic passage in embedded silicon and germanium nanocrystals. The transfer efficiency spectra displays characteristic Fano resonances. By exploiting the Stark effect, we predict that transfer can be switched off with a dc voltage. As the population transfer is highly sensitive to structural variations, with a choice of a sufficiently small two-photon detuning bandwidth, it can be harnessed for addressing individual nanocrystals within an ensemble.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Stark effect, polarizability and electroabsorption in silicon nanocrystals

Demonstrating the quantum-confined Stark effect (QCSE) in silicon nanocrystals (NCs) embedded in oxide has been rather elusive, unlike the other materials. Here, the recent experimental data from ion-implanted Si NCs is unambiguously explained within the context of QCSE using an atomistic pseudopotential theory. This further reveals that the majority of the Stark shift comes from the valence states which undergo a level crossing that leads to a nonmonotonic radiative recombination behavior with respect to the applied field. The polarizability of embedded Si NCs including the excitonic effects is extracted over a diameter range of 2.5--6.5 nm, which displays a cubic scaling, $α=c D^3$, with $c=2.436\times 10^{-11}$ C/(Vm), where $D$ is the NC diameter. Finally, based on intraband electroabsorption analysis, it is predicted that p-doped Si NCs will show substantial voltage tunability, whereas n-doped samples should be almost insensitive. Given the fact that bulk silicon lacks the linear electro-optic effect as being a centrosymmetric crystal, this may offer a viable alternative for electrical modulation using p-doped Si NCs.

0 citations0 reviewsNo code linkedOpen access