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Ceyhun Bulutay

Ceyhun Bulutay appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.atom-phcond-mat.other

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Published work

13 published item(s)

preprint2026arXiv

Exploring Nonreciprocal Noise Transfer under Onsager-Casimir Symmetry in Synthetic-Field Optomechanics

An optomechanical system of fundamental importance consists of two intercoupled mechanical resonators, which are radiation-pressure coupled individually to a photonic cavity. This closed-loop and overall lossy configuration possesses two exceptional points (EPs) and offers the realization of synthetic magnetism, controlled by the loop phase. To elucidate the intricate role of loop phase and EPs in this setting, we analyze the noise power spectral density profiles of internal as well as output fluctuations. In the presence of a synthetic magnetic field, the nonreciprocal routing of a signal is well known. Here, we further show that this also applies to nonreciprocal backaction noise flow when the time-reversal symmetry is broken, while the Onsager-Casimir symmetry still holds. To better quantify this phenomenon, we introduce a nonreciprocity measure that contrasts the time-reversed counterparts as a function of loop phase. We observe that nonreciprocal noise flow is enhanced for smaller intermechanical couplings at the expense of lower sensitivity, whereas for sensing purposes, using a higher intermechanical coupling constant is the more viable option.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Wavelet-based Ramsey magnetometry enhancement of a single NV center in diamond

Nitrogen-vacancy (NV) centers in diamond constitute a solid-state nanosensing paradigm. Specifically for high-precision magnetometry, the so-called Ramsey interferometry is the prevalent choice where the sensing signal is extracted from time-resolved spin-state-dependent photoluminescence (PL) data. Its sensitivity is ultimately limited by the photon shot noise, which cannot be sufficiently removed by averaging or frequency filtering. Here, we propose Ramsey DC magnetometry of a single NV center enhanced by a wavelet-denoising scheme specifically tailored to suppress photon shot noise. It simply operates as a classical post-processing applied on a collected PL time series. Our implementation is based on a method that we named template margin thresholding which enables not only frequency but also time-dependent denoising. We computationally benchmark its DC magnetic field sensing signal-to-noise-ratio improvement over the raw PL data around an order of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nuclear spin squeezing via electric quadrupole interaction

Control over nuclear spin fluctuations is essential for processes that rely on preserving the quantum state of an embedded system. For this purpose, squeezing is a viable alternative, so far that has not been properly exploited for the nuclear spins. Of particular relevance in solids is the electric quadrupole interaction (QI), which operates on nuclei having spin higher than 1/2. In its general form, QI involves an electric field gradient (EFG) biaxiality term. Here, we show that as this EFG biaxiality increases, it enables continuous tuning of single-particle squeezing from the one-axis twisting to the two-axis countertwisting limits. A detailed analysis of QI squeezing is provided, exhibiting the intricate consequences of EFG biaxiality. The initial states over the Bloch sphere are mapped out to identify those favorable for fast initial squeezing, or for prolonged squeezings. Furthermore, the evolution of squeezing in the presence of a phase-damping channel and an external magnetic field are investigated. We observe that dephasing drives toward an anti-squeezed terminal state, the degree of which increases with the spin angular momentum. Finally, QI squeezing in the limiting case of a two-dimensional EFG with a perpendicular magnetic field is discussed, which is of importance for two-dimensional materials, and the associated beat patterns in squeezing are revealed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational study of the recently introduced inverse spectra nuclear magnetic resonance technique to assess its suitability for extracting such structural information. We observe marked spectral differences between the compound InAs and alloy InGaAs QDs. These are linked to the local biaxial and shear strains, and the local bonding configurations. The cation-alloying plays a crucial role especially for the arsenic nuclei. The isotopic line profiles also largely differ among nuclear species: While the central transition of the gallium isotopes have a narrow linewidth, those of arsenic and indium are much broader and oppositely skewed with respect to each other. The statistical distributions of electric field gradient (EFG) parameters of the nuclei within the QD are analyzed. The consequences of various EFG axial orientation characteristics are discussed. Finally, the possibility of suppressing the first-order quadrupolar shifts is demonstrated by simply tilting the sample with respect to the static magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Networks of silicon nanowires: a large-scale atomistic electronic structure analysis

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level, as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quadrupolar spectra of nuclear spins in strained InGaAs quantum dots

Self-assembled quantum dots (QDs) are born out of lattice mismatched ingredients where strain plays an indispensable role. Through the electric quadrupolar coupling, strain affects the magnetic environment as seen by the nuclear spins. To guide prospective single-QD nuclear magnetic resonance (NMR) as well as dynamic nuclear spin polarization experiments, an atomistic insight to the strain and quadrupolar field distributions is presented. A number of implications of the structural and compositional profile of the QD have been identified. A high aspect ratio of the QD geometry enhances the quadrupolar interaction. The inclined interfaces introduce biaxiality and the tilting of the major quadrupolar principal axis away from the growth axis; the alloy mixing of gallium into the QD enhances both of these features while reducing the quadrupolar energy. Regarding the NMR spectra, both Faraday and Voigt geometries are investigated, unraveling in the first place the extend of inhomogeneous broadening and the appearance of the normally-forbidden transitions. Moreover, it is shown that from the main extend of the NMR spectra the alloy mole fraction of a single QD can be inferred. By means of the element-resolved NMR intensities it is found that In nuclei has a factor of five dominance over those of As. In the presence of an external magnetic field, the borderlines between the quadrupolar and Zeeman regimes are extracted as 1.5 T for In and 1.1 T for As nuclei. At these values the nuclear spin depolarization rates of the respective nuclei get maximized due to the noncollinear secular hyperfine interaction with a resident electron in the QD.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Carrier-induced refractive index change and optical absorption in wurtzite InN and GaN: Fullband approach

Based on the full band electronic structure calculations, first we consider the effect of n-type doping on the optical absorption and the refractive index in wurtzite InN and GaN. We identify quite different dielectric response in either case; while InN shows a significant shift in the absorption edge due to n-type doping, this is masked for GaN due to efficient cancellation of the Burstein-Moss effect by the band gap renormalization. For high doping levels the intraband absorption becomes significant in InN. Furthermore, we observe that the free-carrier plasma contribution to refractive index change becomes more important than both band filling and the band gap renormalization for electron densities above 10$^{19}$~cm$^{-3}$ in GaN, and 10$^{20}$~cm$^{-3}$ in InN. As a result of the two different characteristics mentioned above, the overall change in the refractive index due to n-type doping is much higher in InN compared to GaN, which in the former exceeds 4\% for a doping of 10$^{19}$~cm$^{-3}$ at 1.55~$μ$m wavelength. Finally, we consider intrinsic InN under strong photoexcitation which introduces equal density of electron and holes thermalized to their respective band edges. The change in the refractive index at 1.55~$μ$m is observed to be similar to the n-doped case up to a carrier density of 10$^{20}$~cm$^{-3}$. However, in the photoexcited case this is now accompanied by a strong absorption in this wavelength region due to $Γ^v_5 \to Γ^v_6$ intravalence band transition. Our findings suggest that the alloy composition of In$_x$Ga$_{1-x}$N can be optimized in the indium-rich region so as to benefit from high carrier-induced refractive index change while operating in the transparency region to minimize the losses. These can have direct implications for InN-containing optical phase modulators and lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

dc-switchable and single-nanocrystal-addressable coherent population transfer

Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer recipes for the stimulated Raman adiabatic passage in embedded silicon and germanium nanocrystals. The transfer efficiency spectra displays characteristic Fano resonances. By exploiting the Stark effect, we predict that transfer can be switched off with a dc voltage. As the population transfer is highly sensitive to structural variations, with a choice of a sufficiently small two-photon detuning bandwidth, it can be harnessed for addressing individual nanocrystals within an ensemble.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Stark effect, polarizability and electroabsorption in silicon nanocrystals

Demonstrating the quantum-confined Stark effect (QCSE) in silicon nanocrystals (NCs) embedded in oxide has been rather elusive, unlike the other materials. Here, the recent experimental data from ion-implanted Si NCs is unambiguously explained within the context of QCSE using an atomistic pseudopotential theory. This further reveals that the majority of the Stark shift comes from the valence states which undergo a level crossing that leads to a nonmonotonic radiative recombination behavior with respect to the applied field. The polarizability of embedded Si NCs including the excitonic effects is extracted over a diameter range of 2.5--6.5 nm, which displays a cubic scaling, $α=c D^3$, with $c=2.436\times 10^{-11}$ C/(Vm), where $D$ is the NC diameter. Finally, based on intraband electroabsorption analysis, it is predicted that p-doped Si NCs will show substantial voltage tunability, whereas n-doped samples should be almost insensitive. Given the fact that bulk silicon lacks the linear electro-optic effect as being a centrosymmetric crystal, this may offer a viable alternative for electrical modulation using p-doped Si NCs.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment

Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption threshold which gives rise to enhancement in the optical switching parameter.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

A modified algorithm is proposed to include Pauli exclusion principle in Monte-Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed and memory storage. We show that even in moderately high applied fields, one can estimate electronic distribution with a shifted Fermi sphere without introducing significant errors. Furthermore, the free-flights must be coupled to state availability constraints; this leads to substantial decrease in carrier heating at high fields. We give the correct definition for electronic temperature and show that in high applied fields, the quasi Fermi level is valley dependent. The effect of including Pauli exclusion principle on the band profile; electronic temperature and quasi Fermi level for inhomogeneous case of a single barrier heterostructure is illustrated.

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