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Carl Peterson

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physics.app-ph cond-mat.mtrl-sci

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preprint2022arXiv

4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_2$ O $_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L $_{GD}$ = 34.5 $μ$ m exhibits an ON current (I $_{DMAX}$ ) of 56 mA/mm, a high I $_{ON}$ /I $_{OFF}$ ratio $>$ 10 $^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V $_{BR}$ recorded was 4.57 kV (L $_{GD}$ = 44.5 $μ$ m). An LFOM of 132 MW/cm $^2$ was calculated for a V $_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga $_2$ O $_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I $_{DMAX}$ and lowest R $_{ON}$ values achieved simultaneously for any $β$ -Ga $_2$ O $_3$ device with V $_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V $_{BR}$ ), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$ -Ga $_2$ O $_3$ lateral transistors.

preprint2022arXiv

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). All three compositions are investigated by x-ray diffraction, Raman spectroscopy, optical absorption, and 27Al nuclear magnetic resonance (NMR). By investigating single phase B-AGO over a large range of Al2O3 concentrations (10 - 50 mol. %), broad trends in the lattice parameter, vibrational modes, optical bandgap, and crystallographic site preference are determined. All lattice parameters show a linear trend with Al incorporation. According to NMR, aluminum incorporates on both crystallographic sites of B-Ga2O3, with a slight preference for the octahedral (GaII) site, which becomes more disordered with increasing Al. Single crystals of 10% AGO were also characterized by x-ray rocking curve, transmission electron microscopy, purity (glow discharge mass spectroscopy and x-ray fluorescence), optical transmission (200 nm - 20 um wavelengths), and resistivity. These measurements suggest that electrical compensation by impurity acceptor doping is not the likely explanation for high resistivity, but rather the shift of a hydrogen level from a shallow donor to a deep acceptor due to Al alloying. .. Cont. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131 155702.

preprint2022arXiv

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ Films

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$ -Ga $_2$ O $_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$ -Ga $_2$ O $_3$ : Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ , the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices.

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Carl Peterson

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3 publications

4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ Films

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Carl Peterson

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3 publications

4.4 kV βββ-Ga2_22​O3_33​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2^22

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown βββ-Ga2_22​O3_33​ and βββ-(Alx_xx​Ga1−x_1-x1​−x)2_22​ O3_33​ Films

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4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_2$ O $_3$ and $β$ -(Al $_x$ Ga $_1-x$ ) $_2$ O $_3$ Films