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Caleb Roecker

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2 published item(s)

preprint2025arXiv

Detector Response Matrices, Effective Areas, and Flash-Effective Areas for Radiation Detectors

A Detector Response Matrix (DRM) is a discrete representation of an instrument's Detector Response Function (DRF), which quantifies how many discrete energy depositions occur in a detector volume for a given distribution of particles incident on the detector. For simple radiation detectors that can count such energy depositions (such as scintillators, Proportional Counter Tubes (PCTs), etc), we consider the ideal counting DRF, $\mathbf{G}_φ(E_\mathrm{in}, E_\mathrm{dep})$, which relates the detector's counting histogram (number of energy depositions within a given channel) to an incident particles characterization, $φ$ (e.g. incident flux, fluence, intensity). From the counting DRF we can derive the counting DRM, the effective area, and the flash effective area (which measures the total energy deposited in the detector from a large, instantaneous fluence).

preprint2010arXiv

Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip voltage shows a significant variation with tip position. SGM imaging reveals mesoscopic domains of electron-doped and hole-doped regions. Our measurements indicate a substantial spatial fluctuation (on the order of 10^12/cm^2) in the carrier density in graphene due to extrinsic local doping. Important sources for such doping found in our samples include metal contacts, edges of graphene, structural defects, and resist residues.