Researcher profile

Gabriel Lopez

Gabriel Lopez contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Emotion Analysis using Multi-Layered Networks for Graphical Representation of Tweets

Anticipating audience reaction towards a certain piece of text is integral to several facets of society ranging from politics, research, and commercial industries. Sentiment analysis (SA) is a useful natural language processing (NLP) technique that utilizes both lexical/statistical and deep learning methods to determine whether different sized texts exhibit a positive, negative, or neutral emotion. However, there is currently a lack of tools that can be used to analyse groups of independent texts and extract the primary emotion from the whole set. Therefore, the current paper proposes a novel algorithm referred to as the Multi-Layered Tweet Analyzer (MLTA) that graphically models social media text using multi-layered networks (MLNs) in order to better encode relationships across independent sets of tweets. Graph structures are capable of capturing meaningful relationships in complex ecosystems compared to other representation methods. State of the art Graph Neural Networks (GNNs) are used to extract information from the Tweet-MLN and make predictions based on the extracted graph features. Results show that not only does the MLTA predict from a larger set of possible emotions, delivering a more accurate sentiment compared to the standard positive, negative or neutral, it also allows for accurate group-level predictions of Twitter data.

preprint2010arXiv

Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.

preprint2010arXiv

Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip voltage shows a significant variation with tip position. SGM imaging reveals mesoscopic domains of electron-doped and hole-doped regions. Our measurements indicate a substantial spatial fluctuation (on the order of 10^12/cm^2) in the carrier density in graphene due to extrinsic local doping. Important sources for such doping found in our samples include metal contacts, edges of graphene, structural defects, and resist residues.