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Researcher profile

C. Timm

C. Timm contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.str-elcond-mat.supr-con

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Published work

8 published item(s)

preprint2016arXiv

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature ($T_C$) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of $T_C$ with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of $T_C$ below 10\,K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-charge disparity of polarons in organic ferromagnets

Polaron formation in quasi-one-dimensional organic ferromagnets is studied based on an extended Su-Schrieffer-Heeger model combined with a Kondo term. The charge distribution of the polaron is found to be highly asymmetric under spatial reflection, due to the spin radicals. On the contrary, the spin density is nearly symmetric; the spin asymmetry introduced by the extra electron inducing the polaron formation is nearly compensated by the spin polarization of the lower-energy states. We discuss these results on the basis of real-space mean-field calculations and symmetry arguments.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Molecular neuron based on the Franck-Condon blockade

Electronic realizations of neurons are of great interest as building blocks for neuromorphic computation. Electronic neurons should send signals into the input and output lines when subject to an input signal exceeding a given threshold, in such a way that they may affect all other parts of a neural network. Here, we propose a design for a neuron that is based on molecular-electronics components and thus promises a very high level of integration. We employ the Monte Carlo technique to simulate typical time evolutions of this system and thereby show that it indeed functions as a neuron.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Polaron effects on the dc- and ac-tunneling characteristics of molecular Josephson junctions

We study the interplay of polaronic effect and superconductivity in transport through molecular Josephson junctions. The tunneling rates of electrons are dominated by vibronic replicas of the superconducting gap, which show up as prominent features in the differential conductance for the dc and ac current. For relatively large molecule-lead coupling, a features that appears when the Josephson frequency matches the vibron frequency can be identified with an over-the-gap structure observed by Marchenkov et al. [Nat. Nanotech. 2, 481 (2007)]. However, we are more concerned with the weak-coupling limit, where resonant tunneling through the molecular level dominates. We find that certain features involving both Andreev reflection and vibron emission show an unusual shift of the bias voltage V at their maximum with the gate voltage V_g as V ~ (2/3) V_g. Moreover, due to the polaronic effect, the ac Josephson current shows a phase shift of pi when the bias eV is increased by one vibronic energy quantum hbar omega_v. This distinctive even-odd effect is explained in terms of the different sign of the coupling to vibrons of electrons and of Andreev-reflected holes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Metastable giant moments in Gd-implanted GaN, Si, and sapphire

We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theory for Magnetism and Triplet Superconductivity in LiFeAs

Superconducting pnictides are widely found to feature spin-singlet pairing in the vicinity of an antiferromagnetic phase, for which nesting between electron and hole Fermi surfaces is crucial. LiFeAs differs from the other pnictides by (i) poor nesting properties and (ii) unusually shallow hole pockets. Investigating magnetic and pairing instabilities in an electronic model that incorporates these differences, we find antiferromagnetic order to be absent. Instead we observe almost ferromagnetic fluctuations which drive an instability toward spin-triplet p-wave superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Noise Spectra of ac-driven quantum dots

We study the transport properties of a quantum dot driven by either a rotating magnetic field or an ac gate voltage using the Floquet master-equation approach. Both types of ac driving lead to photon-assisted tunneling where quantized amounts of energy are exchanged with the driving field. It is found that the differential-conductance peak due to photon-assisted tunneling does not survive in the Coulomb-blockade regime when the dot is driven by a rotating magnetic field. Furthermore, we generalize the MacDonald formula to calculate the time-averaged noise spectra of ac-driven quantum dots. Besides the peak at zero frequency, the noise spectra show additional peaks or dips in the presence of an ac field. For the case of an applied ac gate voltage, the peak or dip position is fixed at the driving frequency, whereas the position changes with increasing amplitude for the case of a rotating magnetic field. Additional features appear in the noise spectra if a dc magnetic field is applied in addition to a rotating field. In all cases, the peak or dip positions can be understood from the energy differences of two available Floquet channels.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tailoring the magnetism of GaMnAs films by ion irradiation

Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects.

0 citations0 reviewsNo code linkedOpen access