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C. Soci

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Published work

2 published item(s)

preprint2019arXiv

Infrared dielectric metamaterials from high refractive index chalcogenides

High-index dielectric materials are in great demand for nanophotonic devices and applications, from ultrathin optical elements to metal-free sub-diffraction light confinement and waveguiding. Here we show that chalcogenide topological insulators are particularly apt candidates for dielectric nanophotonic architectures in the infrared spectral range by reporting metamaterial resonances in chalcogenide crystals sustained well inside the mid-infrared, choosing Bi$_2$Te$_3$ as case study within this family of materials. Strong resonant modulation of the incident electromagnetic field is achieved thanks to the exceptionally high refractive index ranging between 7 and 8 throughout the 2-10 $μ$m region. Analysis of the complex mode structure in the metamaterial allude to the excitation of poloidal surface currents which could open pathways for enhanced light-matter interaction and low-loss plasmonic configurations by coupling to the spin-polarized topological surface carriers, thereby providing new opportunities to combine dielectric, plasmonic and magnetic metamaterials in a single platform.

preprint2016arXiv

GaAs/AlGaAs Nanowire Photodetector

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 10^10 cm\sqrt{Hz}/W at λ=855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling optical mode confinement, bandgap, density of states, and electrode engineering.