Researcher profile

C. Skierbiszewski

C. Skierbiszewski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.comp-ph physics.optics quant-ph

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preprint2022arXiv

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

We demonstrate a novel electro-luminescence device in which GaN-based $μ$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $μ$-LED surface. A special $μ$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.

preprint2021arXiv

GaN-based Bipolar Cascade Lasers with 25nm wide Quantum Wells: Simulation and Analysis

We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quantum levels. However, internal absorption, low p-cladding conductivity, and self-heating are shown to strongly limit the laser performance.

preprint2010arXiv

Rashba field in GaN

We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface.