Abstract
We demonstrate a novel electro-luminescence device in which GaN-based -LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the -LED surface. A special -LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.
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