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C. Scharf

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physics.ins-det hep-ex

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preprint2022arXiv

First measurement of the surface tension of a liquid scintillator based on Linear Alkylbenzene (HYBLENE 113)

We measured the surface tension of linear alkylbenzene (LAB) HYBLENE 113 mixed with Diphenyloxazole (PPO) as well as of pure LAB HYBLENE 113 as part of material studies for the liquid-scintillator based surround background tagger (SBT) in the proposed SHiP experiment. The measurement was performed using the iron wire method and the surface tension for linear alkyl benzene HYBLENE 113 plus PPO was found to be $(30.0\pm0.6)$ mN/m $22.0\pm 0.5$ °C and for pure HYBLENE 113, $(29.2\pm 0.6)$ mN/m at $21.0\pm 0.5$ °C.

preprint2020arXiv

Influence of radiation damage on the absorption of near-infrared light in silicon

The absorption length, $λ_{abs}$, of light with wavelengths between 0.95 and 1.30$~μ$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been measured. It is found that $λ_{abs}$ decreases with fluence due to radiation-induced defects. A phenomenological parametrisation of the radiation-induced change of $λ_{abs}$ as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of $λ_{abs}$ with irradiation is confirmed by edge-TCT measurements on irradiated silicon strip detectors. Using the measured wavelength dependence of $λ_{abs}$, the change of the silicon band-gap with fluence is determined.

preprint2015arXiv

Precision measurement of the carrier drift velocities in <100> silicon

Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values between 2.4 and 50 kV/cm and temperatures between 233 and 333 K. Two methods have been used for extracting the drift velocities from current transient measurements: A time-of-flight (tof) method and fits of simulated transients to the measured transients, with the parameters describing the field and temperature dependence of the electron and hole mobilities as free parameters. A new mobility parametrization, which also provides a better description of existing data than previous ones, allowed an extension of the classical tof method to the situation of non-uniform fields. For the fit method, the use of the convolution theorem of Fourier transforms enabled us to precisely determine the electronics transfer function of the complete set-up, including the sensor properties. The agreement between the tof and the fit method is about 1 %, which corresponds to a time-of-flight uncertainty of 30 ps for a pad diode of 200 μm thickness at the highest voltages. Combining our results with published data of low-field mobilities, we derive parameterizations of the drift velocities in high-ohmic <100> silicon for electrons and holes for fields between 0 and 50 kV/cm and temperatures between 233 and 333 K.