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C. Opeil

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con

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preprint2016arXiv

Low Temperature Thermoelectric Properties of Co- and Cr- doped CuAgSe

High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility, both of which are enhanced when the material is doped with Ni at the Cu sites. The exact mechanism by which these enhancements result; however, is unclear. In order to further investigate the effects of chemical substitution on the material's thermoelectric properties, we have prepared and performed various measurements on $CuAgSe$ samples doped with Co and Cr according to the following compositional formulas: $Cu_{1-x}Co_{x}AgSe$ $(x=0.02, 0.05, 0.10)$ and $Cu_{1-x}Cr_{x}AgSe$ $(x=0.02, 0.05)$. Measurements of temperature and magnetic field dependent thermal conductivity, electrical resistivity, and Seebeck coefficient will be discussed. Our results reveal a remarkable sensitivity of $CuAgSe$'s thermoelectric properties to chemical doping in general as well as a particular sensitivity to specific dopants. This demonstrated tunability of $CuAgSe$'s various properties furthers the case that high mobility phonon glass-semimetals are strong candidates for potential low temperature thermoelectric applications.

preprint2015arXiv

The influence of electron-doping on the ground state of (Sr{1-x}La{x})2IrO4

The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the limit of La substitution (x~0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.

preprint2014arXiv

Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7

Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.

preprint2013arXiv

Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring

We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at low-temperatures. Second, the thermal conductivity, which was already reduced in nanostructured FeSb2 samples, is further reduced by increased point defect scattering through the n type substitution of Sb site by Te atom. The combined effect results in a ZT = 0.022 at 100 K, an increase of 62% over the ZT value for the optimized Te-doped single crystal sample. Hall coefficient and electrical resistivity measurements reveal a decreased mobility and increased concentration of the carriers in the doped sample.

preprint2011arXiv

Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$

We demonstrate that magnetic phase separation and competing spin order in the colossal magnetoresistive (CMR) manganites can be directly explored via tuning strain in bulk samples of nanocrystalline La$_{1-x}$Ca$_x$MnO$_3$. Our results show that strain can be reversibly frozen into the lattice in order to stabilize coexisting antiferromagnetic domains within the nominally ferromagnetic metallic state of La$_{5/8}$Ca$_{3/8}$MnO$_3$. The measurement of tunable phase separation via magnetic neutron powder diffraction presents a direct route of exploring the correlated spin properties of phase separated charge/magnetic order in highly strained CMR materials and opens a potential avenue for realizing intergrain spin tunnel junction networks with enhanced CMR behavior in a chemically homogeneous material.