Researcher profile

C. M. Sotomayor-Torres

C. M. Sotomayor-Torres contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Optical and mechanical mode tuning in an optomechanical crystal with light-induced thermal effects

We report on the modification of the optical and mechanical properties of a silicon 1D optomechanical crystal cavity due to thermo-optic effects in a high phonon/photon population regime. The cavity heats up due to light absorption in a way that shifts the optical modes towards longer wavelengths and the mechanical modes to lower frequencies. By combining the experimental optical results with finite-difference time-domain simulations we establish a direct relation between the observed wavelength drift and the actual effective temperature increase of the cavity. By assuming that the Young's modulus decreases accordingly to the temperature increase, we find a good agreement between the mechanical mode drift predicted using a finite element method and the experimental one.

preprint2010arXiv

Probing the electron-phonon coupling in ozone-doped graphene by Raman spectroscopy

We have investigated the effects of ozone treatment on graphene by Raman scattering. Sequential ozone short-exposure cycles resulted in increasing the $p$ doping levels as inferred from the blue shift of the 2$D$ and $G$ peak frequencies, without introducing significant disorder. The two-phonon 2$D$ and 2$D'$ Raman peak intensities show a significant decrease, while, on the contrary, the one-phonon G Raman peak intensity remains constant for the whole exposure process. The former reflects the dynamics of the photoexcited electrons (holes) and, specifically, the increase of the electron-electron scattering rate with doping. From the ratio of 2$D$ to 2$D$ intensities, which remains constant with doping, we could extract the ratio of electron-phonon coupling parameters. This ratio is found independent on the number of layers up to ten layers. Moreover, the rate of decrease of 2$D$ and 2$D'$ intensities with doping was found to slowdown inversely proportional to the number of graphene layers, revealing the increase of the electron-electron collision probability.