Source author record

C. M. Sotomayor-Torres

C. M. Sotomayor-Torres appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall physics.optics

Catalog footprint

What is connected

2works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

Optical and mechanical mode tuning in an optomechanical crystal with light-induced thermal effects

We report on the modification of the optical and mechanical properties of a silicon 1D optomechanical crystal cavity due to thermo-optic effects in a high phonon/photon population regime. The cavity heats up due to light absorption in a way that shifts the optical modes towards longer wavelengths and the mechanical modes to lower frequencies. By combining the experimental optical results with finite-difference time-domain simulations we establish a direct relation between the observed wavelength drift and the actual effective temperature increase of the cavity. By assuming that the Young's modulus decreases accordingly to the temperature increase, we find a good agreement between the mechanical mode drift predicted using a finite element method and the experimental one.

preprint2010arXiv

Probing the electron-phonon coupling in ozone-doped graphene by Raman spectroscopy

We have investigated the effects of ozone treatment on graphene by Raman scattering. Sequential ozone short-exposure cycles resulted in increasing the $p$ doping levels as inferred from the blue shift of the 2$D$ and $G$ peak frequencies, without introducing significant disorder. The two-phonon 2$D$ and 2$D'$ Raman peak intensities show a significant decrease, while, on the contrary, the one-phonon G Raman peak intensity remains constant for the whole exposure process. The former reflects the dynamics of the photoexcited electrons (holes) and, specifically, the increase of the electron-electron scattering rate with doping. From the ratio of 2$D$ to 2$D$ intensities, which remains constant with doping, we could extract the ratio of electron-phonon coupling parameters. This ratio is found independent on the number of layers up to ten layers. Moreover, the rate of decrease of 2$D$ and 2$D'$ intensities with doping was found to slowdown inversely proportional to the number of graphene layers, revealing the increase of the electron-electron collision probability.