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Source author record

F. Alzina

F. Alzina appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.optics

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Published work

8 published item(s)

preprint2016arXiv

Optical and mechanical mode tuning in an optomechanical crystal with light-induced thermal effects

We report on the modification of the optical and mechanical properties of a silicon 1D optomechanical crystal cavity due to thermo-optic effects in a high phonon/photon population regime. The cavity heats up due to light absorption in a way that shifts the optical modes towards longer wavelengths and the mechanical modes to lower frequencies. By combining the experimental optical results with finite-difference time-domain simulations we establish a direct relation between the observed wavelength drift and the actual effective temperature increase of the cavity. By assuming that the Young's modulus decreases accordingly to the temperature increase, we find a good agreement between the mechanical mode drift predicted using a finite element method and the experimental one.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thermal conductivity of MoS2 polycrystalline nanosheets

We report a technique for transferring large areas of the CVD-grown, few-layer MoS2 from the original substrate to another arbitrary substrate and onto holey substrates, in order to obtain free-standing structures. The method consists of a polymer- and residue-free, surface-tension-assisted wet transfer, in which we take advantage of the hydrophobic properties of the MoS2. The methods yields better quality transferred layers, with fewer cracks and defects, and less contamination than the widely used PMMA-mediated transfer and allows fabrication of few-layer, fee-standing structures with diameters up to 100 micro-m. We report thermal conductivity measurements by means of contactless Raman thermometry on the so-fabricated samples. The measurements revealed a strong reduction in the in-plane thermal conductivity down to 0.5 W/mK. The results are explained using finite elements method simulations for a polycrystalline film.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A 1D Optomechanical crystal with a complete phononic band gap

Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical and mechanical waves at the nanoscale. Amongst their physical implementations, optomechanical (OM) crystals built on semiconductor slabs enable the integration and manipulation of multiple OM elements in a single chip and provide GHz phonons suitable for coherent phonon manipulation. Different demonstrations of coupling of infrared photons and GHz phonons in cavities created by inserting defects on OM crystals have been performed. However, the considered structures do not show a complete phononic bandgap, which should allow longer dephasing time, since acoustic leakage is minimized. We demonstrate the excitation of acoustic modes in a 1D OM crystal properly designed to display a full phononic bandgap for acoustic modes at 4 GHz. The modes inside the complete bandgap are designed to have mechanical Q factors above 10e8 and invariant to fabrication imperfections.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A novel high resolution contactless technique for thermal field mapping and thermal conductivity determination: Two-Laser Raman Thermometry

We present a novel high resolution contactless technique for thermal conductivity determination and thermal field mapping based on creating a thermal distribution of phonons using a heating laser, while a second laser probes the local temperature through the spectral position of a Raman active mode. The spatial resolution can be as small as $300$ nm, whereas its temperature accuracy is $\pm 2$ K. We validate this technique investigating the thermal properties of three free-standing single crystalline Si membranes with thickness of 250, 1000, and 2000 nm. We show that for 2-dimensional materials such as free-standing membranes or thin films, and for small temperature gradients, the thermal field decays as $T(r) \propto ln(r)$ in the diffusive limit. The case of large temperature gradients within the membranes leads to an exponential decay of the thermal field, $T \propto exp[-A \cdot ln(r)]$. The results demonstrate the full potential of this new contactless method for quantitative determination of thermal properties. The range of materials to which this method is applicable reaches far beyond the here demonstrated case of Si, as the only requirement is the presence of a Raman active mode.

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preprint2012arXiv

Calculation of the specific heat in ultra-thin free-standing silicon membranes

The specific heat of ultra-thin free-standing membranes is calculated using the elastic continuum model. We first obtain the dispersion relations of the discrete set of acoustic modes in the system. The specific heat is then calculated by summing over the discrete out-of-plane wavevector component and integrating over the continuous in-plane wavevector of these waves. In the low-temperature regime (T < 4 K), the flexural polarization is seen to have the highest contribution to the total specific heat. This leads to a linear dependence with temperature, resulting in a larger specific heat for the membrane compared to that of the bulk counterpart

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Lifetimes of Confined Acoustic Phonons in Ultra-Thin Silicon Membranes

We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultra-thin free-standing silicon membranes. Using an ultrafast pump-probe technique of asynchronous optical sampling, we observe that the decay time of the first-order dilatational mode decreases significantly from \sim 4.7 ns to 5 ps with decreasing membrane thickness from \sim 194 to 8 nm. The experimental results are compared with theories considering both intrinsic phonon-phonon interactions and extrinsic surface roughness scattering including a wavelength-dependent specularity. Our results provide insight to understand some of the limits of nanomechanical resonators and thermal transport in nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Probing the electron-phonon coupling in ozone-doped graphene by Raman spectroscopy

We have investigated the effects of ozone treatment on graphene by Raman scattering. Sequential ozone short-exposure cycles resulted in increasing the $p$ doping levels as inferred from the blue shift of the 2$D$ and $G$ peak frequencies, without introducing significant disorder. The two-phonon 2$D$ and 2$D'$ Raman peak intensities show a significant decrease, while, on the contrary, the one-phonon G Raman peak intensity remains constant for the whole exposure process. The former reflects the dynamics of the photoexcited electrons (holes) and, specifically, the increase of the electron-electron scattering rate with doping. From the ratio of 2$D$ to 2$D$ intensities, which remains constant with doping, we could extract the ratio of electron-phonon coupling parameters. This ratio is found independent on the number of layers up to ten layers. Moreover, the rate of decrease of 2$D$ and 2$D'$ intensities with doping was found to slowdown inversely proportional to the number of graphene layers, revealing the increase of the electron-electron collision probability.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analysed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain, but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.

0 citations0 reviewsNo code linkedOpen access