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C. Granja

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Published work

2 published item(s)

preprint2022arXiv

Stray radiation produced in FLASH electron beams characterized by the MiniPIX Timepix3 Flex detector

This work aims to characterize ultra high dose rate pulses (UHDpulse) electron beams using the hybrid semiconductor pixel detector. The Timepix3 (TPX3) ASIC chip was used to measure the composition, spatial, time, and spectral characteristics of the secondary radiation fields from pulsed 15 to 23 MeV electron beams. The challenge is to develop a single compact detector that could extract spectrometric and dosimetric information on such high flux short pulsed fields. For secondary beam measurements, PMMA plates of 1 and 8 cm thickness were placed in front of the electron beam, with a pulse duration of 3.5 microseconds. Timepix3 detectors with silicon sensors of 100 and 500 micrometers thickness were placed on a shifting stage allowing for data acquisition at various lateral positions to the beam axis. The use of the detector in FLEXI configuration enables suitable measurements in situ and minimal self shielding. Preliminary results highlight both the technique and the detector's ability to measure individual UHDpulses of electron beams delivered in short pulses. In addition, the use of the two signal chains per pixel enables the estimation of particle flux and the scattered dose rates (DRs) at various distances from the beam core, in mixed radiation fields.

preprint2016arXiv

Characterization of Thin p-on-p Radiation Detectors with Active Edges

Active edge p-on-p silicon pixel detectors with thickness of 100 $μ$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 $μ$m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.