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A. Gädda

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physics.ins-det physics.med-ph

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preprint2022arXiv

Quality assessment of Cadmium Telluride as a detector material for multispectral medical imaging

Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of CdTe as a detector material for multispectral medical imaging, a research which is conducted as part of the Consortium Project Multispectral Photon-counting for Medical Imaging and Beam characterization (MPMIB). The aim of the project is to develop novel CdTe detectors and obtain spectrum-per-pixel information that make the distinction between different radiation types and tissues possible. To evaluate the defect density inside the crystals -- which can deteriorate the detector performance -- we employ infrared microscopy (IRM). Posterior data analysis allows us to visualise the defect distributions as 3D defect maps. Additionally, we investigate front and backside differences of the material with current-voltage (IV) measurements to determine the preferred surface for the pixelisation of the crystal, and perform test measurements with the prototypes to provide feedback for further processing. We present the different parts of our quality assessment chain and will close with first experimental results obtained with one of our prototype PC detectors in a small tomographic setup.

preprint2020arXiv

Multispectral Photon-Counting for Medical Imaging and Beam Characterization

We present the current status of our project of developing a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle physics experiments at CERN. Here we describe the manufacturing process of our sensors as well as the processing steps for the assembly of first prototypes. The prototypes use currently the PSI46digV2.1-r readout chip. The accompanying readout electronics chain that was used for first measurements will also be discussed. Finally we present an advanced algorithm developed by us for image reconstruction using such photon counting detectors with focus on boron neutron capture therapy. This work is conducted within a consortium of Finnish research groups from Helsinki Institute of Physics, Aalto University, Lappeenranta-Lahti University of Technology LUT and Radiation and Nuclear Safety Authority (STUK) under the RADDESS program of Academy of Finland. Keywords: Solid state detectors, X-ray detectors, Gamma detectors, Neutron detectors, Instrumentation for hadron therapy, Medical-image reconstruction methods and algorithms.

preprint2016arXiv

Characterization of Thin p-on-p Radiation Detectors with Active Edges

Active edge p-on-p silicon pixel detectors with thickness of 100 $μ$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 $μ$m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

preprint2015arXiv

Processing and characterization of epitaxial GaAs radiation detectors

GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.