Researcher profile

C. Cantoni

C. Cantoni contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con cond-mat.other

Trust snapshot

Quick read

Trust 17 - Baseline

4works

0followers

4topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

High Tc superconductivity at the interface between the CaCuO2 and SrTiO3 insulating oxides

At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the interface between insulating oxides, although, until now, with very low Tc. We report the occurrence of high Tc superconductivity in the bilayer CaCuO2/SrTiO3, where both the constituent oxides are insulating. In order to obtain a superconducting state, the CaCuO2/SrTiO3 interface must be realized between the Ca plane of CaCuO2 and the TiO2 plane of SrTiO3. Only in this case extra oxygen ions can be incorporated in the interface Ca plane, acting as apical oxygen for Cu and providing holes to the CuO2 planes. A detailed hole doping spatial profile has been obtained by STEM/EELS at the O K-edge, clearly showing that the (super)conductivity is confined to about 1-2 CaCuO2 unit cells close to the interface with SrTiO3. The results obtained for the CaCuO2/SrTiO3 interface can be extended to multilayered high Tc cuprates, contributing to explain the dependence of Tc on the number of CuO2 planes in these systems.

preprint2015arXiv

Evolution of competing magnetic order in the Jeff=1/2 insulating state of Sr2Ir1-xRuxO4

We investigate the magnetic properties of the series Sr2Ir1-xRuxO4 with neutron, resonant x-ray and magnetization measurements. The results indicate an evolution and coexistence of magnetic structures via a spin flop transition from ab-plane to c-axis collinear order as the 5d Ir4+ ions are replaced with an increasing concentration of 4d Ru4+ ions. The magnetic structures within the ordered regime of the phase diagram (x<0.3) are reported. Despite the changes in magnetic structure no alteration of the Jeff=1/2 ground state is observed. The behavior of Sr2Ir1-xRuxO4 is consistent with electronic phase separation and diverges from a standard scenario of hole doping. The role of lattice alterations with doping on the magnetic and insulating behavior is considered. The results presented here provide insight into the magnetic insulating states in strong spin-orbit coupled materials and the role perturbations play in altering the behavior.

preprint2012arXiv

Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: Direct measurements with atomic-column spatial resolution

The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic force microscope, creating great promise for the development of a new generation of nanoscale electronic devices. However, the mechanism for interface conductivity in LaAlO3/SrTiO3 has remained elusive. The theoretical explanation based on an intrinsic charge transfer (electronic reconstruction) has been strongly challenged by alternative descriptions based on point defects. In this work, thanks to modern aberration-corrected electron probes with atomic-scale spatial resolution, interfacial charge and atomic displacements originating the electric field within the system can be simultaneously measured, yielding unprecedented experimental evidence in favor of an intrinsic electronic reconstruction.

preprint2001arXiv

Study of the microwave electrodynamic response of MgB2 thin films

We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex-situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 C. Preliminary results on films grown in situ by a high rate magnetron sputtering technique from stoichiometric MgB2 and Mg targets are also reported. Microwave measurements have been carried out employing a dielectrically loaded niobium superconducting cavity operating at 19.8 GHz and 4 K. The study shows that the electrodynamic response of MgB2 films is presently dominated by extrinsic sources of dissipation, appearing already at low microwave power, likely to be ascribed to the presence of grain boundaries and normal inclusions in the samples.