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A. Cassinese

A. Cassinese contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con quant-ph

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preprint2016arXiv

Coherently coupling distinct spin ensembles through a high-$T_c$ superconducting resonator

The problem of coupling multiple spin ensembles through cavity photons is revisited by using PyBTM organic radicals and a high-$T_c$ superconducting coplanar resonator. An exceptionally strong coupling is obtained and up to three spin ensembles are simultaneously coupled. The ensembles are made physically distinguishable by chemically varying the $g$ factor and by exploiting the inhomogeneities of the applied magnetic field. The coherent mixing of the spin and field modes is demonstrated by the observed multiple anticrossing, along with the simulations performed within the input-output formalism, and quantified by suitable entropic measures.

preprint2012arXiv

Surface doping in T6/ PDI-8CN2 Heterostructures investigated by transport and photoemission measurements

In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect transistors by PDI-8CN2. We show that an accumulation heterojunction is formed at the interface between the organic semiconductors and that the consequent band bending in T6 caused by PDI-8CN2 deposition can be addressed as the cause of the surface doping in T6 transistors. Several evidences of this phenomenon have been furnished both by electrical transport and photoemission measurements, namely the increase in the conductivity, the shift of the threshold voltage and the shift of the T6 HOMO peak towards higher binding energies.

preprint2009arXiv

Organic film thickness influence on the bias stress instability in Sexithiophene Field Effect Transistors

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2 substrates. After the T6 film structural analysis by X-Ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties of the organic layer has been highlighted. Conversely, the mobility values result almost thickness independent.

preprint2001arXiv

Study of the microwave electrodynamic response of MgB2 thin films

We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex-situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 C. Preliminary results on films grown in situ by a high rate magnetron sputtering technique from stoichiometric MgB2 and Mg targets are also reported. Microwave measurements have been carried out employing a dielectrically loaded niobium superconducting cavity operating at 19.8 GHz and 4 K. The study shows that the electrodynamic response of MgB2 films is presently dominated by extrinsic sources of dissipation, appearing already at low microwave power, likely to be ascribed to the presence of grain boundaries and normal inclusions in the samples.