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Researcher profile

C. A. Kuntscher

C. A. Kuntscher contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2022arXiv

In-plane and out-of-plane optical response of the nodal-line semimetals ZrGeS and ZrGeSe

Polarization-dependent reflectivity measurements were carried out over a broad frequency range on single-crystalline ZrGeSe and ZrGeS compounds, which are closely related to the prototype nodal-line semimetal ZrSiS. These measurements revealed the strongly anisotropic character of both ZrGeSe and ZrGeS, with a reduced plasma frequency for the out-of-plane direction {\bf E}$\| c$ as compared to the in-plane direction {\bf E}$\| ab$. For {\bf E}$\| ab$ the optical conductivity spectrum consists of two Drude terms followed by a shoulder or plateau-like behavior and a distinct U shape at higher energies, while for {\bf E}$\| c$ one Drude term is followed by a peak-like behavior and the U shape of the profile is less developed. Under external pressure, two prominent excitations appear in the out-of-plane optical conductivity spectrum of ZrGeSe, whose frequency position and oscillator strength show a weak anomaly at $\sim$3~GPa. Overall, the pressure-induced changes in the profile of the {\bf E}$\| c$ conductivity spectrum are much enhanced above $\sim$3~GPa. We compare our results to those recently reported for ZrSiS in a quantitative manner.

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preprint2022arXiv

Infrared study of the layered, magnetic insulator Mn(Bi$_{0.07}$Sb$_{0.93}$)$_2$Te$_4$ at low temperatures

Topological insulators with intrinsic magnetic ordering, potentially hosting rare quantum effects, recently attracted extensive attention. MnBi$_2$Te$_4$ is the first established example. The Sb-doped variant Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ shows a great variety of electronic properties depending on the Sb content~$x$, such as shifts in the Fermi level and the Neel temperature $T_{\mathrm N}$, and the change of the free charge carrier type from $n$- to $p$-type at high Sb substitution ratios. Here, we investigate the effect of magnetic ordering on the bulk electronic structure of Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ with high Sb content $x=0.93$ by temperature-dependent reflectivity measurements over a broad frequency range. We observe anomalies in the optical response across $T_{\mathrm N}$ when the antiferromagnetic order sets, which suggests a coupling between the magnetic ordering and the electronic structure of the material.

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preprint2020arXiv

Lattice dynamics and electronic excitations in a large family of lacunar spinels with a breathing pyrochlore lattice structure

Reproducing the electronic structure of AM$_4$X$_8$ lacunar spinels with a breathing pyrochlore lattice is a great theoretical challenge due to the interplay of various factors. The character of the M$_4$X$_4$ cluster orbitals is critically influenced by the Jahn-Teller instability, the spin-orbit interaction, and also by the magnetic state of the clusters. Consequently, to reproduce the narrow-gap semiconducting nature of these moderately correlated materials requires advanced approaches, since the strength of the inter-cluster hopping is strongly affected by the character of the cluster orbitals. In order to provide a solid experimental basis for theoretical studies, we performed broadband optical spectroscopy on a large set of lacunar spinels, with systematically changing ions at the A and M sites as well as the ligand (A=Ga, Ge, Al; M=V, Mo, Nb, Ta; X=S, Se). Our study covers the range of phonon excitations and also electronic transitions near the gap edge. In the phonon excitation spectrum a limited subset of the symmetry allowed modes is observed in the cubic state, with a few additional modes emerging upon the symmetry-lowering structural transition. All the infrared active modes are assigned to vibrations of the ligands and ions at the A sites, with no obvious contribution from the M-site ions. Concerning the electronic states, we found that all compounds are narrow-gap semiconductors ($E_\mathrm{g} = 130 - 350\,$meV) already in their room-temperature cubic state and their structural transitions induce weak, if any, changes in the band gap. The gap value is decreased when substituting S with Se and also when replacing $3d$ ions by $4d$ or $5d$ ions at the M sites.

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