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Researcher profile

Byungki Ryu

Byungki Ryu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.othermath.APmath.CAphysics.app-phphysics.comp-ph

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Published work

4 published item(s)

preprint2021arXiv

Unique Temperature Distribution and Explicit Efficiency Formula for One-Dimensional Thermoelectric Generators under Constant Seebeck Coefficients

A thermoelectric generator converts a temperature difference into electrical energy. Its energy conversion efficiency is determined by the steady-state temperature distribution inside the generator. By assuming the thermoelectric material in the generator has a temperature-independent Seebeck coefficient and the generator is one-dimensional, we show that the second-order integro-differential equation describing the inside temperature distribution has a unique solution for any given ratio of external load resistance to the internal resistance. Hence the efficiency is well defined. Furthermore, we show the efficiency has an explicit formula in terms of the temperature-dependent thermal conductivity and electrical resistivity of the thermoelectric material. On the other hand, if we impose an external load resistance value, not the ratio, then the integro-differential equation can have multiple solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Counterintuitive example on relation between ZT and thermoelectric efficiency

The thermoelectric figure of merit ZT, which is defined using electrical conductivity, Seebeck coefficient, thermal conductivity, and absolute temperature T, has been widely used as a simple estimator of the conversion efficiency of a thermoelectric heat engine. When material properties are constant or slowly varying with T, a higher ZT ensures a higher maximum conversion efficiency of thermoelectric materials. However, as material properties can vary strongly with T, efficiency predictions based on ZT can be inaccurate, especially for wide-temperature applications. Moreover, although ZT values continue to increase, there has been no investigation of the relationship between ZT and the efficiency in the higher ZT regime. In this paper, we report a counterintuitive situation by comparing two materials: although one material has a higher ZT value over the whole operational temperature range, its maximum conversion efficiency is smaller than that of the other. This indicates that, for material comparisons, the evaluation of exact efficiencies as opposed to a simple comparison of the ZTs is necessary in certain cases.

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preprint2020arXiv

Off-centered Pb interstitials in PbTe

In this work, we calculate the defect properties of low-symmetry Pb interstitials in PbTe using first-principles density-functional theory calculations. We break the symmetry imposed on on-centered interstitial defects and show that the lowest ground state of Pb interstitial defects is off-centered along the [111] directions. Due to the four multi-stable structures with low defect formation energies, the defect density of Pb interstitials is expected to be ~5.6 times larger than previous predictions when PbTe is synthesized at 900 K. In contrast to the on-centered Pbinterstitial, the off-centered Pb interstitials in PbTe can exhibit long-range lattice relaxation toward [111] direction beyond distance of 1 nm, indicating the potential formation of weak local dipoles. This result provides an alternative explanation for the emphanitic anharmonicity of PbTe.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes drifted toward the channel/dielectric interface due to small potential barriers and can be captured by Vo in the dielectrics. While Vo(+2) defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that Vo(+2) can diffuse in amorphous phase, including hole accumulation near the interface under negative gate bias.

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