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Eun-Ae Choi

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Published work

2 published item(s)

preprint2020arXiv

Counterintuitive example on relation between ZT and thermoelectric efficiency

The thermoelectric figure of merit ZT, which is defined using electrical conductivity, Seebeck coefficient, thermal conductivity, and absolute temperature T, has been widely used as a simple estimator of the conversion efficiency of a thermoelectric heat engine. When material properties are constant or slowly varying with T, a higher ZT ensures a higher maximum conversion efficiency of thermoelectric materials. However, as material properties can vary strongly with T, efficiency predictions based on ZT can be inaccurate, especially for wide-temperature applications. Moreover, although ZT values continue to increase, there has been no investigation of the relationship between ZT and the efficiency in the higher ZT regime. In this paper, we report a counterintuitive situation by comparing two materials: although one material has a higher ZT value over the whole operational temperature range, its maximum conversion efficiency is smaller than that of the other. This indicates that, for material comparisons, the evaluation of exact efficiencies as opposed to a simple comparison of the ZTs is necessary in certain cases.

preprint2010arXiv

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes drifted toward the channel/dielectric interface due to small potential barriers and can be captured by Vo in the dielectrics. While Vo(+2) defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that Vo(+2) can diffuse in amorphous phase, including hole accumulation near the interface under negative gate bias.