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Researcher profile

Byung-Gu Jeon

Byung-Gu Jeon contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

6 published item(s)

preprint2014arXiv

Electrical control of large magnetization reversal in a helimagnet

In spite of both technical and fundamental importance, reversal of a macroscopic magnetization by an electric field (E) has been limitedly realized and remains as one of great challenges. Here, we report the realization of modulation and reversal of large magnetization (M) by E in a multiferroic crystal Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22, in which a transverse conical spin state exhibits a remanent M and electric polarization below ~150 K. Upon sweeping E between +- 2 MV/m, M is quasi-linearly varied between +- 2 μB/f.u., resulting in the M reversal. Moreover, the remanent M shows non-volatile changes of ΔM = +- 0.15 μB/f.u., depending on the history of the applied electric fields. The large modulation and the non-volatile two-states of M at zero magnetic field are observable up to ~150 K where the transverse conical spin state is stabilized. Nuclear magnetic resonance measurements provide microscopic evidences that the electric field and the magnetic field play an equivalent role, rendering the volume of magnetic domains change accompanied by the domain wall motion. The present findings point to a new pathway for realizing the large magnetization reversal by electric fields at fairly high temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

PbCu3TeO7: An S=1/2 staircase Kagome lattice with significant intra- and inter-plane couplings

We have synthesized polycrystalline and single crystal samples of PbCu3TeO7 and studied its properties via magnetic susceptibility chi(T) and heat-capacity Cp(T) measurements and also electronic structure calculations. Whereas the crystal structure is suggestive of the presence of a quasi-2D network of Cu2+ (S = 1/2) buckled staircase Kagome layers, the chi(T) data show magnetic anisotropy and three magnetic anomalies at temperatures, TN1 ~ 36 K, TN2 ~ 25 K, TN3 ~ 17 K, respectively. The chi(T) data follow the Curie-Weiss law above 200 K and a Curie-Weiss temperature Theta_CW ~ -150 K is obtained. The data deviate from the simple Curie-Weiss law below 200 K, which is well above TN1, suggesting the presence of competing magnetic interactions. The magnetic anomaly at TN3 appears to be of first-order from magnetization measurements, although our heat-capacity Cp(T) results do not display any anomaly at TN3. The hopping integrals obtained from our electronic structure calculations suggest the presence of significant intra-Kagome (next-nearest neighbor and diagonal) and inter-Kagome couplings. These couplings take the PbCu3TeO7 system away from a disordered ground state and lead to long-range order, in contrast to what might be expected for an ideal (isotropic) 2D Kagome system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High Mobility in a Stable Transparent Perovskite Oxide

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19 cm^-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm^2(Vs)^-1 at a doping level of 4.4x10^20 cm^-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 Deg. C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.

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preprint2012arXiv

Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature

Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits unusually high electrical mobility of 320 cm^2(Vs)^-1 at room temperature and superior thermal stability at high temperatures [H. J. Kim et al. Appl. Phys. Express. 5, 061102 (2012)]. Following that work, we report various physical properties of (Ba,La)SnO3 single crystals and films including temperature-dependent transport and phonon properties, optical properties and first-principles calculations. We find that almost doping-independent mobility of 200-300 cm^2(Vs)^-1 is realized in the single crystals in a broad doping range from 1.0x10^19 to 4.0x10^20 cm^-3. Moreover, the conductivity of ~10^4 ohm^-1cm^-1 reached at the latter carrier density is comparable to the highest value. We attribute the high mobility to several physical properties of (Ba,La)SnO3: a small effective mass coming from the ideal Sn-O-Sn bonding, small disorder effects due to the doping away from the SnO2 conduction channel, and reduced carrier scattering due to the high dielectric constant. The observation of a reduced mobility of ~70 cm^2(Vs)^-1 in the film is mainly attributed to additional carrier-scatterings which are presumably created by the lattice mismatch between the substrate SrTiO3 and (Ba,La)SnO3. The main optical gap of (Ba,La)SnO3 single crystals remained at about 3.33 eV and the in-gap states only slightly increased, thus maintaining optical transparency in the visible region. Based on these, we suggest that the doped BaSnO3 system holds great potential for realizing all perovskite-based, transparent high-frequency high-power functional devices as well as highly mobile two-dimensional electron gas via interface control of heterostructured films.

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preprint2012arXiv

Theoretical Modeling of ME effect at Low frequency and Resonance Frequency for Magnetoelectric Laminates with Anisotropic Piezoelectric Properties

A new theory is developed for the magnetoelectric (ME) coupling in a symmetric 2-2 ME laminate having a representative piezoelectric crystal (PMN-PT) particularly with anisotropic piezoelectric properties. Considering the average field method, the theoretical expressions for the transverse ME voltage coefficients at low and resonance frequencies were derived. The theory takes into account the anisotropic properties of the piezoelectric materials providing two different expressions of transverse ME voltage coefficients for different in-plane magnetic fields both at low and resonance frequencies. The numerical simulations show multiple resonance frequencies and phase differences between transverse ME voltage coefficients showing good agreement with the experimental results. Our theory should be generally applicable to other ME laminates with any piezoelectric with anisotropic piezoelectric coefficients.

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preprint2011arXiv

Strong magnetoelastic effect on the magnetoelectric phenomena of TbMn$_{2}$O$_{5}$

Comparative studies of magnetoelectric susceptibility ($α$), magnetization ($M$), and magnetostriction ($u$) in TbMn$_{2}$O$_{5}$ reveal that the increment of $M$ owing to the field-induced Tb$^{3+}$ spin alignment coins a field-asymmetric line shape in the $α(H)$ curve, being conspicuous in a low temperature incommensurate phase but persistently subsisting in the entire ferroelectric phase. Correlations among electric polarization, $u$, and $M^{2}$ variation represent linear relationships, unambiguously showing the significant role of Tb magnetoelastic effects on the low field magnetoelectric phenomena of TbMn$_{2}$O$_{5}$. An effective free energy capturing the observed experimental features is also suggested.

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