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Bryan Leung

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Published work

4 published item(s)

preprint2020arXiv

Bulk-Boundary Correspondence for Topological Insulators with Quantized Magneto-Electric Effect

We study bulk-boundary correspondences and related surface phenomena stabilized by the second Chern number in three-dimensional insulators driven in adiabatic cycles. Magnetic fields and disorder effects are incorporated in our analysis using operator algebraic methods. We use the connecting maps between the $K$-theories of bulk and boundary algebras as engines for the bulk-boundary correspondences. We discovered that both the exponential and the index connecting maps are relevant for the context considered here as they lead to distinct experimentally observable surface phenomena, such as pumping and transfer of quantum surface Hall states or proximity induced Hall effect. The surface Hall physics of time-reversal symmetric topological insulators is also investigated using the new tools, which can model irrational magnetic fluxes and arbitrary large surface disorder.

preprint2012arXiv

A Non-Commutative Formula for the Isotropic Magneto-Electric Response

A non-commutative formula for the isotropic magneto-electric response of disordered insulators under magnetic fields is derived using the methods of non-commutative geometry. Our result follows from an explicit evaluation of the Ito derivative with respect to the magnetic field of the non-commutative formula for the electric polarization reported in Ref. 1. The quantization, topological invariance and connection to a second Chern number of the magneto-electric response are discussed in the context of 3-dimensional, disordered, time-reversal or inversion symmetric topological insulators.

preprint2012arXiv

Effect of Strong Disorder in a 3-Dimensional Topological Insulator: Phase Diagram and Maps of the Z2 Invariant

We study the effect of strong disorder in a 3-dimensional topological insulators with time-reversal symmetry and broken inversion symmetry. Firstly, using level statistics analysis, we demonstrate the persistence of delocalized bulk states even at large disorder. The delocalized spectrum is seen to display the levitation and pair annihilation effect, indicating that the delocalized states continue to carry the Z2 invariant after the onset of disorder. Secondly, the Z2 invariant is computed via twisted boundary conditions using an efficient numerical algorithm. We demonstrate that the Z2 invariant remains quantized and non-fluctuating even after the spectral gap becomes filled with dense localized states. In fact, our results indicate that the Z2 invariant remains quantized until the mobility gap closes or until the Fermi level touches the mobility edges. Based on such data, we compute the phase diagram of the Bi2Se3 topological material as function of disorder strength and position of the Fermi level.