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Bruce A. Davidson

Bruce A. Davidson appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.str-el

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Published work

6 published item(s)

preprint2022arXiv

Strain-induced magnetization control in an oxide multiferroic heterostructure

Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence, and supporting DFT analysis, of a transition in La0.65Sr0.35MnO3 (LSMO) thin film to a stable ferromagnetic phase, that is induced by the structural and strain properties of the ferroelectric BaTiO3 (BTO) substrate, which can be modified by applying external electric fields. X-ray Magnetic Circular Dichroism (XMCD) measurements on Mn L edges with a synchrotron radiation show, in fact two magnetic transitions as a function of temperature that correspond to structural changes of the BTO substrate. We also show that ferromagnetism, absent in the pristine condition at room temperature, can be established by electrically switching the BTO ferroelectric domains in the out-of-plane direction. The present results confirm that electrically induced strain can be exploited to control magnetism in multiferroic oxide heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Controlling the electrical and magnetic ground states by doping in the complete phase diagram of titanate Eu1-xLaxTiO3 thin films

EuTiO3, a band insulator, and LaTiO3, a Mott insulator, are both antiferromagnetic with transition temperatures ~ 5.5 K and ~ 160 K, respectively. Here, we report the synthesis of Eu1-xLaxTiO3 thin films with x = 0 to 1 by oxide molecular beam epitaxy. The films in the full range have high crystalline quality and show no phase segregation, allowing us carry out transport measurements to study their electrical and magnetic properties. From x = 0.03 to 0.95, Eu1-xLaxTiO3 films show conduction by electrons as charge carriers, with differences in carrier densities and mobilities, contrary to the insulating nature of pure EuTiO3 and LaTiO3. Following a rich phase diagram, the magnetic ground states of the films vary with increasing La-doping level, changing Eu1-xLaxTiO3 from an antiferromagnetic insulator to an antiferromagnetic metal, a ferromagnetic metal, a paramagnetic metal, and back to an antiferromagnetic insulator. These emergent properties reflect the evolutions of the band structure, mainly at the Ti t2g bands near the Fermi level, when Eu2+ are gradually replaced by La3+. This work sheds light on this method for designing the electrical and magnetic properties in strongly-correlated oxides and completes the phase diagram of the titanate Eu1-xLaxTiO3.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With ALL-Laser MBE we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

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preprint2016arXiv

Surface- and strain-tuning of the optical dielectric function in epitaxially grown CaMnO3

We report a strong thickness dependence of the complex frequency-dependent optical dielectric function in epitaxial CaMnO3(001) thin films on SrTiO3(001), LaAlO3(001), and SrLaAlO4(001) substrates. A doubling of the peak value of the imaginary part of the dielectric function and spectral shifts of 0.5 eV for a given magnitude of absorption are observed. On the basis of the experimental data and first-principles density functional theory calculations of the dielectric function, its evolution with thickness from 4 to 63 nm has several regimes. In the thinnest, strain-coherent films, the response is characterized by a significant contribution from the free surface that dominates strain effects. However, at intermediate and larger thicknesses approaching the bulk-like film, strain coherence and partial strain relaxation persist and in influence the dielectric function.

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preprint2011arXiv

Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, corresponding to an interfacial spin polarization of > 95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

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preprint2011arXiv

Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy

Tunneling magnetoresistance (TMR) in a vertical manganite junction was investigated by low-temperature scanning laser microscopy (LTSLM) allowing to determine the local relative magnetization M orientation of the two electrodes as a function of magnitude and orientation of the external magnetic field H. Sweeping the field amplitude at fixed orientation revealed magnetic domain nucleation and propagation in the junction electrodes. For the high-resistance state an almost single-domain antiparallel magnetization configuration was achieved, while in the low-resistance state the junction remained in a multidomain state. Calculated resistance $R_\mathrm{calc}(H)$ based on the local M configuration obtained by LTSLM is in quantitative agreement with R(H) measured by magnetotransport.

0 citations0 reviewsNo code linkedOpen access