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Brian D. Gerardot

Brian D. Gerardot appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.opticscond-mat.quant-gasphysics.app-phphysics.atom-ph

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Published work

15 published item(s)

preprint2022arXiv

Coherence in Cooperative Photon Emission from Indistinguishable Quantum Emitters

Photon-mediated interactions between atomic systems can arise via coupling to a common electromagnetic mode or by quantum interference. Here, we probe the role of coherence in cooperative emission arising from two distant but indistinguishable solid-state emitters because of path erasure. The primary signature of cooperative emission, the emergence of "bunching" at zero delay in an intensity correlation experiment, is used to characterise the indistinguishability of the emitters, their dephasing, and the degree of correlation in the joint system that can be coherently controlled. In a stark departure from a pair of uncorrelated emitters, in Hong-Ou-Mandel type interference measurements we observe photon statistics from a pair of indistinguishable emitters resembling that of a weak coherent state from an attenuated laser. Our experiments establish techniques to control and characterize cooperative behavior between matter qubits using the full quantum optics toolbox, a key step toward realizing large-scale quantum photonic networks.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Exciton-polarons in the presence of strongly correlated electronic states in a MoSe$_2$/WSe$_2$ moiré superlattice

Two-dimensional moiré materials provide a highly tunable platform to investigate strongly correlated electronic states. Such emergent many-body phenomena can be optically probed in moiré systems created by stacking two layers of transition metal dichalcogenide semiconductors: optically injected excitons can interact with itinerant carriers occupying narrow moiré bands to form exciton-polarons sensitive to strong correlations. Here, we investigate the behaviour of excitons dressed by a Fermi sea localised by the moiré superlattice of a molybdenum diselenide (MoSe$_2$) / tungsten diselenide (WSe$_2$) twisted hetero-bilayer. At a multitude of fractional fillings of the moiré lattice, we observe ordering of both electrons and holes into stable correlated electronic states. Magneto-optical measurements reveal extraordinary Zeeman splittings of the exciton-polarons due to exchange interactions in the correlated hole phases, with a maximum close to the correlated state at one hole per site. The temperature dependence of the Zeeman splitting reveals antiferromagnetic ordering of the correlated holes across a wide range of fractional fillings. Our results illustrate the nature of exciton-polarons in the presence of strongly correlated electronic states and reveal the rich potential of the MoSe$_2$/WSe$_2$ platform for investigations of Fermi-Hubbard and Bose-Hubbard physics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optical dipole orientation of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks

We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Discrete Interactions between a few Interlayer Excitons Trapped at a MoSe$_2$-WSe$_2$ Heterointerface

Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation effects. In order to acquire a detailed understanding of the possible many-body effects, the fundamental interactions between individual IXs have to be studied. Here, we trap a tunable number of dipolar within a nanoscale confinement potential induced by placing a MoSe$_2$-WSe$_2$ hetero-bilayer (HBL) onto an array of SiO$_2$ nanopillars. We control the mean occupation of the IX trap via the optical excitation level and observe discrete sharp-line emission from different configurations of interacting IXs. We identify these features as different multiparticle states with $N_{IX}\sim1-5$ via their power dependencies and directly measure the hierarchy of dipolar and exchange interactions as $N_{IX}$ increases. The interlayer biexciton ($N_{IX}=2$) is found to be an emission doublet that is blue-shifted from the single exciton by $ΔE=(8.4\pm0.6)$ meV and split by $2J=(1.2\pm0.5)$ meV. The blueshift is even more pronounced for triexcitons ($(12.4\pm0.4)$ meV), quadexcitons ($(15.5\pm0.6)$ meV) and quintexcitons ($(18.2\pm0.8)$ meV). These values are shown to be mutually consistent with numerical modelling of dipolar excitons confined to a harmonic trapping potential having a confinement lengthscale in the range $\ell\approx 3$ nm. Our results contribute to the understanding of interactions between IXs in TMD HBLs at the discrete limit of only a few excitations and represent a key step towards exploring quantum correlations between them.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Highly tunable quantum light from moiré trapped excitons

Photon antibunching, a hallmark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: a small lattice mismatch or relative twist in a heterobilayer can create moiré trapping potentials for excitons which are predicted to create arrays of quantum emitters. While signatures of moiré trapped excitons have been observed, their quantum nature has yet to be confirmed. Here we report photon antibunching from single moiré trapped interlayer excitons in a heterobilayer. Via polarization resolved magneto-optical spectroscopy, we demonstrate the discrete anharmonic spectra arise from bound band-edge electron-hole pairs trapped in moiré potentials. Finally, using an out-of-plane electric field, we exploit the large permanent dipole of interlayer excitons to achieve large DC Stark tuning, up to 40 meV, of the quantum emitters. Our results confirm the quantum nature of moiré confined excitons and open opportunities to investigate their inhomogeneity and interactions between the emitters or tune single emitters into resonance with cavity modes or other emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multiplexed Single Photons from Deterministically Positioned Nanowire Quantum Dots

Solid-state quantum emitters are excellent sources of on-demand indistinguishable or entangled photons and can host long-lived spin memories, crucial resources for photonic quantum information applications. However, their scalability remains an outstanding challenge. Here we present a scalable technique to multiplex streams of photons from multiple independent quantum dots, on-chip, into a fiber network for use off-chip. Multiplexing is achieved by incorporating a multi-core fiber into a confocal microscope and spatially matching the multiple foci, seven in this case, to quantum dots in an array of deterministically positioned nanowires. First, we report the coherent control of the emission of biexciton-exciton cascade from a single nanowire quantum dot under resonant two-photon excitation. Then, as a proof-of-principle demonstration, we perform parallel spectroscopy on the nanowire array to identify two nearly identical quantum dots at different positions which are subsequently tuned into resonance with an external magnetic field. Multiplexing of background-free single photons from these two quantum dots is then achieved. Our approach, applicable to all types of quantum emitters, can readily be scaled up to multiplex $>100$ quantum light sources, providing a breakthrough in hardware for photonic based quantum technologies. Immediate applications include quantum communication, quantum simulation, and quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Resonance fluorescence from waveguide-coupled strain-localized two-dimensional quantum emitters

Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe2) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g$^{(2)}(0)=0.150\pm0.093$ and perform on-chip resonant excitation yielding a g$^{(2)}(0)=0.377\pm0.081$. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-layer locking of interlayer excitons trapped in moiré potentials

Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted TMD heterobilayers can form moiré patterns that modulate the electronic band structure according to atomic registry, leading to spatial confinement of interlayer exciton (IXs). Here we report the observation of spin-layer locking of IXs trapped in moiré potentials formed in a heterostructure of bilayer 2H-MoSe$_2$ and monolayer WSe$_2$. The phenomenon of locked electron spin and layer index leads to two quantum-confined IX species with distinct spin-layer-valley configurations. Furthermore, we observe that the atomic registries of the moiré trapping sites in the three layers are intrinsically locked together due to the 2H-type stacking characteristic of bilayer TMDs. These results identify the layer index as a useful degree of freedom to engineer tunable few-level quantum systems in two-dimensional heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, Magneto-optics and Charge tuning

Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to -4, as for 2D excitons in this material. In a charge tunable sample we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage. The control of the emission properties of these quantum dot like emitters paves the way for further engineering of the light matter interaction in these atomically thin materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Indistinguishable single photons with flexible electronic triggering

A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum circuit or network will trigger the generation of an indistinguishable photon. Further, operating the photon source up to the limit imposed by its lifetime is desirable. Here, we report on the application of a true on-demand approach in which we can electronically trigger the precise arrival time of a single photon as well as control the excitation pulse duration based on resonance fluorescence from a single InAs/GaAs quantum dot. We investigate in detail the effect of the finite duration of an excitation $π$ pulse on the degree of photon antibunching. Finally, we demonstrate that highly indistinguishable single photons can be generated using this on-demand approach, enabling maximum flexibility for future applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths

We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction lengths, and $g$-factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement regime. Large range electric field tunability, up to 7 meV, is demonstrated for excitons. We observe a large reduction, up to one order of magnitude, in the diamagnetic coefficient when rotating the magnetic field from Faraday to Voigt geometry due to the unique dot morphology. The complete spectroscopic characterization of the fundamental properties of long-wavelength dot-in-a-well structures provides insight for the applicability of quantum technologies based on quantum dots emitting at telecom wavelengths.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain-induced spatial and spectral isolation of quantum emitters in mono- and bi-layer WSe2

Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique opto-electronic properties. Here we report that strain gradients induced by substrate patterning result in spatially and spectrally isolated quantum emitters in mono- and bi-layer WSe2. By correlating localized excitons with localized strain-variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable ~170 meV. We probe the fine-structure, magneto-optics, and second order coherence of a strained emitter. These results raise the prospect to strain-engineer quantum emitter properties and deterministically create arrays of quantum emitters in two-dimensional semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Exciton fine-structure splitting of telecom wavelength single quantum dots: statistics and external strain tuning

In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1μm < λ< 1.3 μm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 μeV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High resolution coherent population trapping on a single hole spin in a semiconductor

We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physics-like dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify this process as charge noise by, first, demonstrating that the hole spin g-factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electro-elastic tuning of single particles in individual self-assembled quantum dots

We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 micro-eV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitting energies is also measured. We exploit the variable exciton response to tune multiple quantum dots on the same chip into resonance.

0 citations0 reviewsNo code linkedOpen access