Abstract
Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique opto-electronic properties. Here we report that strain gradients induced by substrate patterning result in spatially and spectrally isolated quantum emitters in mono- and bi-layer WSe2. By correlating localized excitons with localized strain-variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable ~170 meV. We probe the fine-structure, magneto-optics, and second order coherence of a strained emitter. These results raise the prospect to strain-engineer quantum emitter properties and deterministically create arrays of quantum emitters in two-dimensional semiconductors.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.