Researcher profile

Boyi Yang

Boyi Yang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Ultralow loss hollow-core negative curvature fibers with nested elliptical antiresonance tubes

Hollow-core negative curvature fibers can confine light within air core and have small nonlinearity and dispersion and high damage threshold, thereby attracting a great deal of interest in the field of hollow core fibers. However, reducing the loss of hollow-core negative curvature fibers is a serious problem. On this basis, three new types of fibers with different nested tube structures are proposed in the near-infrared spectral regions and compared in detail with a previously proposed hollow-core negative curvature fiber. We used finite-element method for numerical simulation studies of their transmission loss, bending loss, and single-mode performance, and then the transmission performance of various structural fibers is compared. We found that the nested elliptical antiresonant fiber 1 has better transmission performance than that of the three other types of fibers in the spectral range of 0.72-1.6 μm. Results show that the transmission loss of the LP01 mode is as low as 6.45*10-6 dB/km at λ = 1.06 μm. To the best of our knowledge, the record low level of transmission loss of hollow-core antiresonant fibers with nested tube structures was created. In addition, the nested elliptical antiresonant fiber 1 has better bending resistance, and its bending loss was below 2.99*10-2 dB/km at 5 cm bending radius.

preprint2011arXiv

Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping

We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic doping using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step doping mechanism for electrostatic doping was revealed. The normal resistance increased with carrier concentration on the overdoped side and the high temperature (180 K) Hall number peaked at a doping level of p$\sim$0.15. These anomalous behaviors suggest that there is an electronic phase transition in the Fermi surface around the optimal doping level.