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Bishwajit Debnath

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph cond-mat.other nlin.PS

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preprint2020arXiv

Properties of Shape-Engineered Phoxonic Crystals: Brillouin-Mandelstam Spectroscopy and Ellipsometry Study

We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affecting the light-matter interactions. Acoustic phonon states can be tuned by external boundaries, either as a result of phonon confinement effects in individual nanostructures, or as a result of artificially induced external periodicity, as in the phononic crystals. The shape of the nanoscale pillar array was engineered to ensure the interplay of both effects. The Brillouin-Mandelstam spectroscopy data indicated strong flattening of the acoustic phonon dispersion in the frequency range from 2 GHz to 20 GHz and the phonon wave vector extending to the higher-order Brillouin zones. The specifics of the phonon dispersion dependence on the pillar arrays orientation suggest the presence of both periodic modulation and spatial localization effects for the acoustic phonons. The ellipsometry data reveal a distinct scatter pattern of four-fold symmetry due to nanoscale periodicity of the pillar arrays. Our results confirm the dual functionality of the nanostructured shape-engineered structure and indicate a possible new direction for fine-tuning the light-matter interaction in the next generation of photonic, optoelectronic, and phononic devices.

preprint2019arXiv

Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor Materials

We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 W/mK at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 is 0.85 W/mK and 2.7 W/mK, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 W/mK through-plane and 6.3 W/mK in-plane. The data obtained by both techniques reveal strong thermal anisotropy of the films and the dominant contribution of phonons to heat conduction. Our results are important for the proposed applications of the antiferromagnetic semiconductor thin films in spintronic devices.

preprint2016arXiv

An Integrated Tantalum Sulfide - Boron Nitride - Graphene Oscillator: A Charge-Density-Wave Device Operating at Room Temperature

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, such as 1T-TaSe2, 1T-TaS2 and 1T-TiSe2, exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here we show that in 2D CDW 1T-TaS2, the abrupt change in the electrical conductivity and hysteresis at the transition point between nearly-commensurate and incommensurate charge-density-wave phases can be used for constructing an oscillator that operates at room temperature. The hexagonal boron nitride was capped on 1T-TaS2 thin film to provide protection from oxidation, and an integrated graphene transistor provides a voltage tunable, matched, low-resistance load enabling precise voltage control of the oscillator frequency. The integration of these three disparate two-dimensional materials, in a way that exploits the unique properties of each, yields a simple, miniaturized, voltage-controlled oscillator device. Theoretical considerations suggest that the upper limit of oscillation frequency to be in the THz regime.

preprint2015arXiv

Acoustic Phonon Spectrum and Thermal Transport in Nanoporous Alumina Arrays

We report results of a combined investigation of thermal conductivity and acoustic phonon spectra in nanoporous alumina membranes with the pore diameter decreasing from D=180 nm to 25 nm. The samples with the hexagonally arranged pores were selected to have the same porosity of ~13%. The Brillouin-Mandelstam spectroscopy measurements revealed bulk-like phonon spectrum in the samples with D=180-nm pores and spectral features, which were attributed to spatial confinement, in the samples with 25-nm and 40-nm pores. The velocity of the longitudinal acoustic phonons was reduced in the samples with smaller pores. Analysis of the experimental data and calculated phonon dispersion suggests that both phonon-boundary scattering and phonon spatial confinement affect heat conduction in membranes with the feature sizes D<40 nm.