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Researcher profile

Binghui Ge

Binghui Ge contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2022arXiv

Tunable two-dimensional superconductivity and spin-orbit coupling at the EuO/KTaO3(110) interface

Unconventional quantum states, most notably the two-dimensional (2D) superconductivity, have been realized at the interfaces of oxide heterostructures where they can be effectively tuned by the gate voltage ($V_G$). Here we report that the interface between high-quality EuO (111) thin film and KTaO3 (KTO) (110) substrate shows superconductivity with onset transition temperature $T_c^{onset}$ = 1.35 K. The 2D nature of superconductivity is verified by the large anisotropy of the upper critical field and the characteristics of a Berezinskii-Kosterlitz-Thouless transition. By applying $V_G$, $T_c^{onset}$ can be tuned from ~ 1 to 1.7 K; such an enhancement can be possibly associated with a boosted spin-orbit energy $ε_{so}$ = $\hbar$ / $τ_{so}$, where $τ_{so}$ is the spin-orbit relaxation time. Further analysis of $τ_{so}$ based on the upper critical field ($H_{c2}$) and magnetoconductance reveals complex nature of spin-orbit coupling (SOC) at the EuO/KTO(110) interface with different mechanisms dominate the influence of SOC effects for the superconductivity and the magnetotransport in the normal state. Our results demonstrate that the SOC should be considered as an important factor determining the 2D superconductivity at oxide interfaces.

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preprint2021arXiv

Electrical manipulation of skyrmions in a chiral magnet

Writing, erasing and computing are three fundamental operations required by any working electronic devices. Magnetic skyrmions could be basic bits in promising in emerging topological spintronic devices. In particular, skyrmions in chiral magnets have outstanding properties like compact texture, uniform size and high mobility. However, creating, deleting and driving isolated skyrmions, as prototypes of aforementioned basic operations, have been grand challenge in chiral magnets ever since the discovery of skyrmions, and achieving all these three operations in a single device is highly desirable. Here, by engineering chiral magnet Co$_8$Zn$_{10}$Mn$_2$ into the customized micro-devices for in-situ Lorentz transmission electron microscopy observations, we implement these three operations of skyrmions using nanosecond current pulses with a low a current density about $10^{10}$ A/m$^2$ at room temperature. A notched structure can create or delete magnetic skyrmions depending on the direction and magnitude of current pulses. We further show that the magnetic skyrmions can be deterministically shifted step-by-step by current pulses, allowing the establishment of the universal current-velocity relationship. These experimental results have immediate significance towards the skyrmion-based memory or logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Isostructural Metal-Insulator Transition Driven by Dimensional-Crossover in SrIrO3 Heterostructures

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.

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preprint2020arXiv

AC-frequency switchable correlated transports in rare-earth perovskite nickelates

Whilst electron correlations were previously recognized to trigger beyond conventional direct current (DC) electronic transportations (e.g. metal-to-insulator transitions, bad metal, thermistors), their respective influences to the alternation current (AC) transport are largely overlooked. Herein, we demonstrate active regulations in the electronic functionalities of d-band correlated rare-earth nickelate (ReNiO3) thin films, by simply utilizing their electronic responses to AC-frequencies (fAC). Assisted by temperature dependent near edge X-ray absorption fine structure analysis, we discovered positive temperature dependences in Coulomb viscosity of ReNiO3 that moderates their AC impedance. Distinguished crosslinking among R(Real)-fAC measured in nearby temperatures is observed that differs to conventional oxides. It enables active adjustability in correlated transports of ReNiO3, among NTCR-, TDelta- and PTCR- thermistors, via fAC from the electronic perspective without varying materials or device structures. The TDelta-fAC relationship can be further widely adjusted via Re composition and interfacial strains. The AC-frequency sensitivity discovered in ReNiO3 brings in a new freedom to regulating and switching the device working states beyond the present semiconductor technologies. It opens a new paradigm for enriching novel electronic applications catering automatic transmission or artificial intelligence in sensing temperatures and frequencies.

0 citations0 reviewsNo code linkedOpen access