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Bernd Gotsmann

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physics.app-ph cond-mat.mes-hall cond-mat.mtrl-sci physics.optics cond-mat.str-el

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preprint2022arXiv

Thermal Simulation and Experimental Analysis of Optically Pumped InP-on-Si Micro- and Nanocavity Lasers

There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, signifi-cant thermal issues affect their operation. The complexity of geometrical parameters and the various materials involved hinder the extraction of clear design guidelines and operation strategies. Here, we present a systematic thermal analysis of InP-on-Si micro- and nanocavity lasers based on steady-state and transient thermal simulations and experimental analysis. In particular, we investi-gated the use of metal cavities for improving the thermal properties of InP-on-Si micro- and nanocavity lasers. Heating of lasers is studied by using Raman thermometry and the results agree well with simulation results, both reveal a temperature reduction of hundreds of kelvins for the metal-clad cavity. Transient simulations are carried out to improve our understanding of the dynamic temperature variation under pulsed and continuous-wave pumping conditions. The results show that the presence of a metal clad-ding not only increases the overall efficiency in heat dissipation, but also causes a much faster temperature response. Together with optical experimental results under pulsed pumping, we conclude that a pulse width of 10 ns and repetition rate of 100 kHz is the optimal pumping condition for a 2 micrometer wide square cavity.

preprint2022arXiv

Waveguide coupled III-V photodiodes monolithically integrated on Si

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n structure. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we observed a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

preprint2020arXiv

Single-Material Graphene Thermocouples

On-chip temperature sensing on a micro- to nanometer scale is becoming more desirable as the complexity of nanodevices and size requirements increase and with it the challenges in thermal probing and management. This highlights the need for scalable and reliable temperature sensors which have the potential to be incorporated into current and future device structures. Here, we show that U-shaped graphene stripes consisting of one wide and one narrow leg form a single material thermocouple that can function as a self-powering temperature sensor. We find that the graphene thermocouples increase in sensitivity with a decrease in leg width, due to a change in the Seebeck coefficient, which is in agreement with our previous findings and report a maximum sensitivity of $ΔS \approx$ 39 $\mathrmμ$V/K.

preprint2020arXiv

Spatially Resolved Thermoelectric Effects in Operando Semiconductor-Metal Nanowire Heterostructures

The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al$_2$O$_3$ shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical current, for both Joule and Peltier effects. An analysis is developed that is able to extract the thermal and thermoelectric properties including thermal conductivity, the thermal boundary resistance to the substrate and the Peltier coefficient from a single measurement. Our investigations demonstrate the potential of quantitative measurements of temperature around self-heated devices and structures down to the scattering length of heat carriers.

preprint2019arXiv

Imaging the Thermalization of Hot Carriers After Thermionic Emission Over a Polytype Barrier

The thermalization of non-equilibrium charge carriers is at the heart of thermoelectric energy conversion. In nanoscale systems, the equilibration length can be on the order of the system size, leading to a situation where thermoelectric effects need to be considered as spatially distributed, rather than localized at junctions. The energy exchange between charge carriers and phonons is of fundamental scientific and technological interest, but their assessment poses significant experimental challenges. We addressed these challenges by imaging the temperature change induced by Peltier effects in crystal phase engineered InAs nanowire (NW) devices. Using high-resolution scanning thermal microscopy (SThM), we have studied current-carrying InAs NWs, which feature a barrier segment of wurtzite (WZ) of varying length in a NW of otherwise zincblende (ZB) crystal phase. The energy barrier acts as a filter for electron transport around the Fermi energy, giving rise to a thermoelectric effect. We find that thermalization through electron-phonon heat exchange extends over the entire device. We analyze the temperature profile along a nanowire by comparing it to spatially dependent heat diffusion and electron thermalization models. We are able to extract the governing properties of the system, including the electron thermalization length of $223 \pm 9$\,nm, Peltier coefficient and Seebeck coefficient introduced by the barrier of $39 \pm 7$\,mV and $89 \pm 21$\,$μ$V/K, respectively, and a thermal conductivity along the wire axis of $8.9 \pm 0.5$\,W/m/K. Finally, we compare two ways to extract the elusive thermal boundary conductance between NW and underlying substrate.

preprint2017arXiv

Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study

Thermoelectric (TE) measurements have been performed on the workhorses of today's data storage devices, exhibiting either the giant or the anisotropic magnetoresistance effect (GMR and AMR). The temperature-dependent (50-300 K) and magnetic field-dependent (up to 1 T) TE power factor (PF) has been determined for several Co-Ni alloy nanowires with varying Co:Ni ratios as well as for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, which were all synthesized via a template-assisted electrodeposition process. A systematic investigation of the resistivity, as well as the Seebeck coefficient, is performed for Co-Ni alloy nanowires and Co-Ni/Cu multilayered nanowires. At room temperature, measured values of TE PFs up to 3.6 mWK-2m-1 for AMR samples and 2.0 mWK-2m-1 for GMR nanowires are obtained. Furthermore, the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowires and by up to 52 % for GMR Co-Ni/Cu samples in an external applied magnetic field. The magnetic nanowires exhibit TE PFs that are of the same order of magnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and, additionally, give the opportunity to adjust the TE power output to changing loads and hotspots through external magnetic fields.

preprint2016arXiv

Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, the sphere temperatures were varied in a range between 100 and 200 Celsius. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.