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Beom Seo Kim

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

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preprint2021arXiv

Observation of Kondo hybridization with an orbital-selective Mott phase in 4d Ca2-xSrxRuO4

The heavy fermion state with Kondo-hybridization (KH), usually manifested in f-electron systems with lanthanide or actinide elements, was recently discovered in several 3d transition metal compounds without f-electrons. However, KH has not yet been observed in 4d/5d transition metal compounds, since more extended 4d/5d orbitals do not usually form flat bands that supply localized electrons appropriate for Kondo pairing. Here, we report a doping- and temperature-dependent angle-resolved photoemission study on 4d Ca2-xSrxRuO4, which shows the signature of KH. We observed a spectral weight transfer in the γ-band, reminiscent of an orbital-selective Mott phase (OSMP). The Mott localized γ-band induces KH with the itinerant \b{eta}-band, resulting in spectral weight suppression around the Fermi level. Our work is the first to demonstrate the evolution of the OSMP with possible KH among 4d electrons, and thereby expands the material boundary of Kondo physics to 4d multi-orbital systems.

preprint2020arXiv

Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent 2D Dirac fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials.

preprint2016arXiv

Experimental determination of the massive Dirac fermion model parameters for MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$

Monolayer MX$_2$ (M = Mo, W; X = S, Se) has drawn much attention recently for its possible application possibilities for optoelectronics, spintronics, and valleytronics. Its exotic optical and electronic properties include a direct band gap, circular polarization dependent optical transitions, and valence band (VB) spin band splitting at the $K$ and $-K$ points. These properties can be described within a minimal model, called the massive Dirac fermion model for which the parameters need to be experimentally determined. We propose that the parameters can be obtained from angle resolved photoemission (ARPES) data from bulk 2H-MX$_2$, instead of monolayer MX$_2$. Through tight binding calculations, we show how the electronic structure at high symmetry points evolves as the system changes from the monolayer to the three dimensional bulk 2H-MX$_2$ . We find vanishing $k_z$ dispersion and almost no change in the direct band gap at the $K$ and $-K$ points, in sharp contrast to the strong $k_z$ dispersion at the $Γ$ point. These facts allow us to extract the gap and spin band splitting at the $K$ point as well as the hopping energy from bulk ARPES data. We performed ARPES experiments on single crystals of MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$ at various photon energies and also with potassium evaporation. From the data, we determined the parameters for the massive Dirac fermion model for monolayer MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$.