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Researcher profile

Benjamin Damilano

Benjamin Damilano contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallphysics.optics

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Published work

3 published item(s)

preprint2021arXiv

Revealing topological phase in Pancharatnam-Berry metasurfaces using mesoscopic electrodynamics

Relying on the local orientation of nanostructures, Pancharatnam-Berry metasurfaces are currently enabling a new generation of polarization-sensitive optical devices. A systematical mesoscopic description of topological metasurfaces is developed, providing a deeper understanding of the physical mechanisms leading to the polarization-dependent breaking of translational symmetry in contrast with propagation phase effects. These theoretical results, along with interferometric experiments, contribute to the development of a solid theoretical framework for arbitrary polarization-dependent metasurfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of $0.14 ~\text{mJ/cm}^2$ per pulse (threshold peak powers of $35 ~\text{kW/cm}^2$). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.

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preprint2020arXiv

Probing nanoscale thermal transport with cathodoluminescence thermometry

Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive fabrication. Here, we overcome these limitations by extracting temperature from measurements of bandgap cathodoluminescence in GaN nanowires with spatial resolution limited by the electron cascade, and use this to determine thermal conductivities in the range of 19-68 W/m*K in three new ways. The electron beam acts simultaneously as a temperature probe and as a controlled delta-function-like heat source to measure thermal conductivities using steady-state methods, and we introduce a frequency-domain method using pulsed electron beam excitation. The different thermal conductivity measurements we explore agree within error where comparable. Our results provide novel methods of measuring thermal properties that allow for rapid, in-situ, high-resolution measurements of integrated circuits and semiconductor nanodevices, and open the door for electron-beam based nanoscale phonon transport studies.

0 citations0 reviewsNo code linkedOpen access