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Researcher profile

Baozhu Lu

Baozhu Lu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

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Published work

3 published item(s)

preprint2021arXiv

Suppression of second-harmonic generation from linear bands in the topological multifold semimetal RhSi

Recent experiments in the topological Weyl semimetal TaAs have observed record-breaking second-harmonic generation, a non-linear optical response at $2ω$ generated by an incoming light source at $ω$. However, whether second-harmonic generation is enhanced in topological semimetals in general is a challenging open question because their band structure entangles the contributions arising from trivial bands and topological band crossings. In this work, we circumvent this problem by studying RhSi, a chiral topological semimetal with a simple band structure with topological multifold fermions close to the Fermi energy. We measure second-harmonic generation (SHG) in a wide frequency window, $ω\in [0.27,1.5]$eV and, using first principle calculations, we establish that, due to their linear dispersion, the contribution of multifold fermions to SHG is subdominant as compared with other regions in the Brillouin zone. Our calculations suggest that parts of the bands where the dispersion is relatively flat contribute significantly to SHG. As a whole, our results suggest avenues to enhance SHG responses.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Observation of Topological Photocurrents in the Chiral Weyl Semimetal RhSi

Weyl semimetals are crystals in which electron bands cross at isolated points in momentum space. Associated with each crossing point (or Weyl node) is an integer topological invariant known as the Berry monopole charge. The discovery of new classes of Weyl materials is driving the search for novel properties that derive directly from the Berry charge. The circular photogalvanic effect (CPGE), whereby circular polarized light generates a current whose direction depends on the helicity of the absorbed photons, is a striking example of a macroscopic property that emerges from Weyl topology. Recently, it was predicted that the rate of current generation associated with optical transitions near a Weyl node is proportional to its monopole charge and independent of material-specific parameters. In Weyl semimetals that retain mirror symmetry this universal photogalvanic current is strongly suppressed by opposing contributions from energy equivalent nodes of opposite charge. However, when all mirror symmetries are broken, as in chiral Weyl systems, nodes with opposite topological charge are no longer degenerate, opening a window of photon energies where the topological CPGE can emerge. In this work we test this theory through measurement of the photon-energy dependence of the CPGE in the chiral Weyl semimetal RhSi. The spectrum is fully consistent with a topological CPGE, as it reveals a response in a low-energy window that closes at 0.65 eV, in quantitative agreement with the theoretically-derived bandstucture.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Transition from Intrinsic to Extrinsic Anomalous Hall Effect in the Ferromagnetic Weyl Semimetal PrAlGe$_{1-x}$Si$_x$

Recent reports of a large anomalous Hall effect (AHE) in ferromagnetic Weyl semimetals (FM WSM) have led to a resurgence of interest in this enigmatic phenomenon. However, due to a lack of tunable materials, the interplay between the intrinsic mechanism caused by Berry curvature and extrinsic mechanisms due to scattering remains unclear in FM WSMs. In this contribution, we present a thorough investigation of both the extrinsic and intrinsic AHE in a new family of FM WSMs, PrAlGe$_{1-x}$Si$_x$, where $x$ can be tuned continuously. From DFT calculations, we show that the two end members, PrAlGe and PrAlSi, have different Fermi surfaces but similar Weyl node structures. Experimentally, we observe moderate changes in the anomalous Hall coefficient ($R_S$) but significant changes in the ordinary Hall coefficient ($R_0$) in PrAlGe$_{1-x}$Si$_x$ as a function of $x$, confirming a change of Fermi surface. By comparing the magnitude of $R_0$ and $R_S$, we identify two regimes; $|R_0|<|R_S|$ when $x\le0.5$ and $|R_0|>|R_S|$ when $x>0.5$. Through a detailed scaling analysis, we discover a universal anomalous Hall conductivity (AHC) from intrinsic contribution when $x\le0.5$. Such universal AHC is absent when $x>0.5$. Thus, we point out the significance of the extrinsic mechanisms in FM WSMs and report the first observation of a transition from intrinsic to extrinsic AHE in PrAlGe$_{1-x}$Si$_x$.

0 citations0 reviewsNo code linkedOpen access